Recombination parameters of point defects in dislocation-free silicon single crystals

• Published in: Functional Materials
• Date: 2006
• Main Authors: Talanin, V.I., Talanin, I.E.
• Format: Article
• Language: English
• Published: НТК «Інститут монокристалів» НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/139612
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Recombination parameters of point defects in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin // Functional Materials. — 2006. — Т. 13, № 1. — С. 69-73. — Бібліогр.: 25 назв. — англ.

The recombination parameters of the point defects dynamics (recombination barrier, recombination time, recombination factor) at high and low temperatures are discussed proceeding from the heterogeneous mechanism of grown-in microdefects formation and transformation. The cooling-induced decomposition...