Quantum effects in multilayer Si-Ge nanoheterostructures

• Published in: Поверхность
• Date: 2008
• Main Authors: Kozyrev, Yu.N., Rubezhanska, M.Yu., Sushyі, A.V., Kondratenko, S.V., Vakulenko, O.V., Dadykin, A.A., Naumovets, A.G.
• Format: Article
• Language: English
• Published: Інститут хімії поверхні ім. О.О. Чуйка НАН України 2008
• Subjects: Физико-химия поверхностных явлений
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/146920
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Quantum effects in multilayer Si-Ge nanoheterostructures / Yu.N. Kozyrev, M.Yu. Rubezhanska, A.V. Sushyі, S.V. Kondratenko, O.V. Vakulenko, A.A. Dadykin, A.G. Naumovets // Поверхность. — 2008. — Вип. 14. — С. 176-185. — Бібліогр.: 25 назв. — англ.

The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in Ge quantum dots originating due to the lattice mismatch during the epitaxial g...