Quantum effects in multilayer Si-Ge nanoheterostructures
The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in Ge quantum dots originating due to the lattice mismatch during the epitaxial g...
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| Published in: | Поверхность |
|---|---|
| Date: | 2008 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут хімії поверхні ім. О.О. Чуйка НАН України
2008
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| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/146920 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Quantum effects in multilayer Si-Ge nanoheterostructures / Yu.N. Kozyrev, M.Yu. Rubezhanska, A.V. Sushyі, S.V. Kondratenko, O.V. Vakulenko, A.A. Dadykin, A.G. Naumovets // Поверхность. — 2008. — Вип. 14. — С. 176-185. — Бібліогр.: 25 назв. — англ. |