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Quantum effects in multilayer Si-Ge nanoheterostructures

The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in Ge quantum dots originating due to the lattice mismatch during the epitaxial g...

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Bibliographic Details
Published in:Поверхность
Date:2008
Main Authors: Kozyrev, Yu.N., Rubezhanska, M.Yu., Sushyі, A.V., Kondratenko, S.V., Vakulenko, O.V., Dadykin, A.A., Naumovets, A.G.
Format: Article
Language:English
Published: Інститут хімії поверхні ім. О.О. Чуйка НАН України 2008
Subjects:
Физико-химия поверхностных явлений
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/146920
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Quantum effects in multilayer Si-Ge nanoheterostructures / Yu.N. Kozyrev, M.Yu. Rubezhanska, A.V. Sushyі, S.V. Kondratenko, O.V. Vakulenko, A.A. Dadykin, A.G. Naumovets // Поверхность. — 2008. — Вип. 14. — С. 176-185. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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