The spatial separation of electron-hole pairs in Si/Ge heterostructures
Photogeneration and transport of nonequilibrium charge carriers, and the determination of photoresponce mechanisms in semiconductor SiGe/Si and SiGe/SiO₂/p-Si heterostructures with nanoisland were investigated. The structures were grown by molecular beam epitaxy technique. The work generalizes the r...
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| Veröffentlicht in: | Поверхность |
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| Datum: | 2015 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут хімії поверхні ім. О.О. Чуйка НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/148495 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The spatial separation of electron-hole pairs in Si/Ge heterostructures / V.S. Lysenko, S.V. Kondratenko, Ye.Ye. Melnichuk, M.I. Terebinska, O.I. Tkachuk, Yu.N. Kozyrev, V.V. Lobanov // Поверхность. — 2015. — Вип. 7 (22). — С. 285-296. — Бібліогр.: 27 назв. — англ. |