The spatial separation of electron-hole pairs in Si/Ge heterostructures

• Published in: Поверхность
• Date: 2015
• Main Authors: Lysenko, V.S., Kondratenko, S.V., Melnichuk, Ye.Ye., Terebinska, M.I., Tkachuk, O.I., Kozyrev, Yu.N., Lobanov, V.V.
• Format: Article
• Language: English
• Published: Інститут хімії поверхні ім. О.О. Чуйка НАН України 2015
• Subjects: Наноматериалы и нанотехнологии
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/148495
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The spatial separation of electron-hole pairs in Si/Ge heterostructures / V.S. Lysenko, S.V. Kondratenko, Ye.Ye. Melnichuk, M.I. Terebinska, O.I. Tkachuk, Yu.N. Kozyrev, V.V. Lobanov // Поверхность. — 2015. — Вип. 7 (22). — С. 285-296. — Бібліогр.: 27 назв. — англ.

Photogeneration and transport of nonequilibrium charge carriers, and the determination of photoresponce mechanisms in semiconductor SiGe/Si and SiGe/SiO₂/p-Si heterostructures with nanoisland were investigated. The structures were grown by molecular beam epitaxy technique. The work generalizes the r...