Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model
The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/InxGa₁-xAs/GaAs considering the self-assembled deformation-diffusion interaction is constructed.
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| Datum: | 2015 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2015
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| Schriftenreihe: | Condensed Matter Physics |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/153567 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model / R.M. Peleshchak, N.Ya. Kulyk, M.V. Doroshenko // Condensed Matter Physics. — 2015. — Т. 18, № 2. — С. 23602: 1–12. — Бібліогр.: 10 назв. — англ. |