The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads...

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Published in:Condensed Matter Physics
Date:2019
Main Authors: Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O., Guba, S.K.
Format: Article
Language:English
Published: Інститут фізики конденсованих систем НАН України 2019
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/157479
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine