The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation
In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads...
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| Veröffentlicht in: | Condensed Matter Physics |
|---|---|
| Datum: | 2019 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики конденсованих систем НАН України
2019
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/157479 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ. |