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The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an
 increase in the electric field strength, depending on the directio...

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Veröffentlicht in:Condensed Matter Physics
Datum:2019
Hauptverfasser: Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O., Guba, S.K.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики конденсованих систем НАН України 2019
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/157479
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ.

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