The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation

• Veröffentlicht in: Condensed Matter Physics
• Datum: 2019
• Hauptverfasser: Peleshchak, R.M., Kuzyk, O.V., Dan'kiv, O.O., Guba, S.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики конденсованих систем НАН України 2019
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/157479
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation / R.M. Peleshchak, O.V. Kuzyk, O.O. Dan'kiv, S.K. Guba // Condensed Matter Physics. — 2019. — Т. 22, № 1. — С. 13801: 1–15. — Бібліогр.: 26 назв. — англ.

In the paper, the effect of the electric field on the conditions of formation and on the period of the surface superlattice of adatoms in n-GaAs semiconductor is investigated. It is established that in GaAs semiconductor, an increase in the electric field strength, depending on the direction, leads...