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About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon

The experimental dependence of the etching rate monosilicon of self-bias voltages on the active electrode at other constant conditions in the discharge is shows. With increasing negative bias potential monosilicon etching rate increases, then reaches a maximum at Ubias ≈ - (140…160 V). Further incre...

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Datum:	2010
Hauptverfasser:	Fedorovich, O.A., Kruglenko, M.P., Polozov, B.P.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2010
Schlagworte:	Низкотемпературная плазма и плазменные технологии
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/17499
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon / O.A. Fedorovich, M.P. Kruglenko, B.P. Polozov // Вопросы атомной науки и техники. — 2010. — № 6. — С. 185-187. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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