About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon

• Date: 2010
• Main Authors: Fedorovich, O.A., Kruglenko, M.P., Polozov, B.P.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2010
• Subjects: Низкотемпературная плазма и плазменные технологии
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/17499
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: About influence of energy of electrons and ions on speed of electron- and ion-stimulated plasmachemical etching of silicon / O.A. Fedorovich, M.P. Kruglenko, B.P. Polozov // Вопросы атомной науки и техники. — 2010. — № 6. — С. 185-187. — Бібліогр.: 7 назв. — англ.

The experimental dependence of the etching rate monosilicon of self-bias voltages on the active electrode at other constant conditions in the discharge is shows. With increasing negative bias potential monosilicon etching rate increases, then reaches a maximum at Ubias ≈ - (140…160 V). Further incre...