Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type

• Published in: Вопросы атомной науки и техники
• Date: 2020
• Main Authors: Azarenkov, N.A., Semenenko, V.E., Stervoyedov, N.G.
• Format: Article
• Language: English
• Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2020
• Subjects: Pure materials and the vacuum technologies
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/194344
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type / N.A. Azarenkov, V.E. Semenenko, N.G. Stervoyedov // Problems of atomic science and tecnology. — 2020. — № 1. — С. 44-50. — Бібліогр.: 19 назв. — англ.

The kinetics of the formation of perfect n– and p–type silicon single crystals is considered. The peculiarity of the formation of point and linear defects in the process of a controlled phase transformation of a liquid–solid is established. The effect of supersaturation by vacancies of the direction...