Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes
X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has...
Saved in:
| Published in: | Вопросы атомной науки и техники |
|---|---|
| Date: | 2020 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2020
|
| Subjects: | |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/194355 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes / S.V. Malykhin, V.A. Makhlai, S.V. Surovitskiy, I.E. Garkusha, S.S. Herashchenko, V.V. Kondratenko, I.A. Kopylets, E.N. Zubarev, S.S. Borisova, A.V. Fedchenko // Problems of atomic science and tecnology. — 2020. — № 2. — С. 3-8. — Бібліогр.: 25 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860235992294752256 |
|---|---|
| author | Malykhin, S.V. Makhlai, V.A. Surovitskiy, S.V. Garkusha, I.E. Herashchenko, S.S. Kondratenko, V.V. Kopylets, I.A. Zubarev, E.N. Borisova, S.S. Fedchenko, A.V. |
| author_facet | Malykhin, S.V. Makhlai, V.A. Surovitskiy, S.V. Garkusha, I.E. Herashchenko, S.S. Kondratenko, V.V. Kopylets, I.A. Zubarev, E.N. Borisova, S.S. Fedchenko, A.V. |
| citation_txt | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes / S.V. Malykhin, V.A. Makhlai, S.V. Surovitskiy, I.E. Garkusha, S.S. Herashchenko, V.V. Kondratenko, I.A. Kopylets, E.N. Zubarev, S.S. Borisova, A.V. Fedchenko // Problems of atomic science and tecnology. — 2020. — № 2. — С. 3-8. — Бібліогр.: 25 назв. — англ. |
| collection | DSpace DC |
| container_title | Вопросы атомной науки и техники |
| description | X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has been worked out for the formation of the quasicrystalline and crystal-approximant phases as a result of high-speed quenching using pulsed action with a heat load of 0.6 MJ/m². The changes in the contents of these phases as well as in their structure and substructure parameters were studied during isothermal vacuum annealing at a temperature of 550 ℃ and also as a result of irradiation with 5 plasma pulses in the range of heat load from 0.1 to 0.4 MJ/m². The quasicrystalline phase was found to be resistant to irradiation with hydrogen plasma.
Методами рентгенівської дифракції та СЄМ вивчені структурні і фазові зміни в тонкій плівці, отриманої магнетронним розпиленням мішені складу Ti52Zr30Ni18 (ат.%) на підкладці зі сталі, при радіаційнотермічному впливі імпульсної водневої плазми на прискорювачі КСПП Х-50. Відпрацьована методика формування квазікристалічної фази і фази кристала-апроксиманта в результаті швидкісного загартування за допомогою імпульсного впливу з тепловим навантаженням 0,6 MДж/м². Вивчено зміну параметрів структури і субструктури, а також вмісту зазначених фаз при ізотермічному вакуумному відпалі при температурі 550 ℃, а також в результаті опромінення 5 імпульсами плазми в інтервалі теплового навантаження від 0,1 до 0,4 МДж/м². Квазікристалічна фаза виявилася стійкою до опромінення водневою плазмою.
Методами рентгеновской дифракции и СЭМ изучены структурные и фазовые изменения в тонкой пленке, полученной магнетронным распылением мишени состава Ti52Zr30Ni18 (ат.%) на подложке из стали, при радиационно-термическом воздействии импульсной водородной плазмы на ускорителе КСПУ Х-50. Отработана методика формирования квазикристаллической фазы и фазы кристалла-аппроксиманта в результате скоростной закалки с помощью импульсного воздействия с тепловой нагрузкой 0,6 MДж/м². Изучены изменение параметров структуры и субструктуры, а также содержания указанных фаз при изотермическом вакуумном отжиге при температуре 550 ℃, а также в результате облучения 5 импульсами плазмы в интервале тепловой нагрузки 0,1…0,4 МДж/м². Квазикристаллическая фаза оказалась устойчивой к облучению водородной плазмой.
|
| first_indexed | 2025-12-07T18:24:29Z |
| format | Article |
| fulltext |
ISSN 1562-6016. PASТ. 2020. №2(126), p. 3-8.
SECTION 1
PHYSICS OF RADIATION DAMAGES AND EFFECTS IN SOLIDS
BEHAVIOR OF THE Ti-Zr-Ni THIN FILM CONTAINING
QUASICRYSTALLINE AND APPROXIMANT PHASES UNDER
RADIATIVE-THERMAL ACTION IN TRANSITION MODES
S.V. Malykhin
1
, V.A. Makhlai
1,2
, S.V. Surovitskiy
1
, I.E. Garkusha
2
, S.S. Herashchenko
2
,
V.V. Kondratenko
1
, I.A. Kopylets
1
, E.N. Zubarev
1
, S.S. Borisova
1
, A.V. Fedchenko
1
1
National Technical University “Kharkiv Polytechnical Institute”, Kharkiv, Ukraine;
2
National Science Center “Kharkov Institute of Physics and Technology”,
Institute of Plasma Physics, Kharkiv, Ukraine
E-mail: malykhin@kpi.kharkov.ua
X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film
obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal
influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has been worked out for the
formation of the quasicrystalline and crystal-approximant phases as a result of high-speed quenching using pulsed
action with a heat load of 0.6 MJ/m
2
. The changes in the contents of these phases as well as in their structure and
substructure parameters were studied during isothermal vacuum annealing at a temperature of 550 °C and also as a
result of irradiation with 5 plasma pulses in the range of heat load from 0.1 to 0.4 MJ/m
2
. The quasicrystalline phase
was found to be resistant to irradiation with hydrogen plasma.
PACS: 52.40.HF
INTRODUCTION
Quasicrystals (QCs) are a special class of materials
in the condensed state, whose structure differs from the
structure of classical crystals. They have a strict long-
range order in the arrangement of atoms in the absence
of translational invariance and show symmetry
forbidden by classical crystallography, for example,
icosahedral [1]. Therefore, QCs are characterized by
abnormal and unique physical properties [2]. It can be
noted the following ones: corrosion resistance, high
hardness, low surface energy, low thermal conductivity,
hardness and increased strength at high temperatures. At
low temperatures, QCs are fragile, and this makes their
application difficult, but the use of thin-film
technologies solves this problem [3]. So, it is known to
use aluminum-based QCs thin-film coatings as heat-
insulating layers on turbine blades, as well as non-stick
coatings for chemical devices or household utensils [2].
In the Ti-Zr-Ni system, the formation of a
quasicrystalline icosahedral phase in a 100 μm thick
surface layer was first observed upon pulsed irradiation
of a massive Ti41.5Zr41.5Ni17 alloy with flows of
hydrogen, helium, or argon with thermal loads up to
0.6 MJ/m
2
in [4]. The features of the formation of a
quasicrystalline thin-film coating are described in [5, 6].
The quasicrystals) of the Ti-Zr-Ni system are stable
up to ≈ 660 °С and are distinguished by a high hydrogen
absorption capacity (up to 2 Н/Ме) in the form of a
solid solution, and therefore, increased resistance to
blister formation can be expected for them [7]. It is
believed that the absence of the property of translational
invariance makes quasicrystals stable during operation
under conditions of increased radiation [8–10]. We
assume that the film coatings of Ti-Zr-Ni quasicrystals,
or the Ti-Zr-Ni quasicrystal/W layered system, can
serve as thermal protection and protection against
hydrogen embrittlement, which is possible when
operating in the ITER international fusion reactor.
In this work, the goal is to obtain a thin film of a Ti-
Zr-Ni quasicrystal or its approximants on the surface of
the steel by the rapid quenching method using
irradiation with hydrogen plasma at the QSPA-Kh50
quasistationary accelerator. It is assumed that due to the
high crystallization rate under nonequilibrium
conditions, a mono- or heterophase structure can form
in the exposure zone, the components of which can be a
quasicrystalline phase, approximant phases, or other
intermetallic phases. Also, we will study the behavior of
the obtained thin film under low-energy plasma
irradiation.
1. SAMPLES AND INVESTIGATION
TECHNIQUE
The main idea of the experiment is to form a
quasicrystalline structure in the Ti-Zr-Ni coating
subjected to high-speed surface hardening. The surface
of the initial Ti-Zr-Ni coating is irradiated with a
powerful pulsed flow of hydrogen plasma of
microsecond duration and an ion flux of up to 10
27
m
-2
∙s
-
1
with a surface thermal load (q) of about 0.6 MJ/m
2
,
which is of the order of the tungsten melting threshold.
A film coating with a thickness of 14.8 μm was
made by direct-flow magnetron sputtering of a target
with the Ti52Zr30Ni18 (at.%) composition. The
substrate used was Eurofer European Association base
steel of the ferrite class, which is supposed to be used in
ITER.
The substrate was not forced to heat; its temperature
during the deposition did not exceed 40…50 °C. The
samples were irradiated with hydrogen plasma flows
using a QSPA Kh-50 quasistationary plasma accelerator
mailto:malykhin@kpi.kharkov.ua
(NSC KIPT). The main parameters of QSPA plasma
flows were as follows: ion impact energy of about
0.4 keV, maximum plasma pressure of 3.2 bar, and flow
diameter of about 18 cm. The plasma pulse shape was
approximately triangular, and the pulse duration was
0.25 ms. The number of pulses was 5. After irradiation,
the sample was subjected to vacuum annealing at
550 °C during 1 to 8 h. Thermal-radiation resistance
(the behavior of the coating under exposure) during
irradiation of the sample with hydrogen plasma flows
was studied using a lower heat load, namely from 0.1 to
0.4 MJ/m
2
. Analysis of the structure and phase
composition was performed by XRD analysis and
transmission electron microscopy (TEM). X-ray
measurements were carried out using a DRON-M
apparatus in the filtered Cu-Kα radiation. The spectra
were processed using the New_Profile3.5 software
package.
The identification of the quasicrystalline phase and
the determination of its quasicrystallinity parameter aq
were carried out according to J.W. Cahn [11] using the
original software package. To construct nominal X-ray
diffraction patterns of possible crystalline phases: the
1/1 crystal approximant (W phase), the Laves phase (Ti,
Zr) 2Ni (L, structural type C14), and the α-Ti (Zr) solid
solution, the PowderCell program was used taking into
account data [12]. Surface morphology was studied
using scanning electron microscopy (SEM) on a JEOL
JSM-6390 instrument.
2. RESULTS AND DISCUSSION
2.1. CHARACTERIZATION
OF THE INITIAL STATE
According to the results of XRD and electron
diffraction (Fig. 1), the coating can be considered
amorphous or nanocrystalline in the initial state after
deposition, as was stated in [13], since the crystallite
size calculated from the half-width of the maximum in
the direction normal to the surface was about 2 nm. In
the SEM patterns (Fig. 2,a,b) taken in the secondary
electron mode (SEI), the surface morphology in the
initial state is formed as a cluster of spherical
formations ranging from micron to nanomicron size. In
the figure they are marked with arrows. An increase of
magnification reveals increasingly smaller formations.
Similar spherical formations were observed in [6] on
TEM images; note, that the contrast in the images does
not change when the sample is tilted.
We assume that the observed spherical formations
are “crystallite-nuclei” of the icosahedral phase, which,
during growth, inherit the Bergman cluster or
triacontahedron close to the spherical shape [1, 2].
A detailed characterization of the structure of the
films we obtained in the initial state was given in [5].
There, the peculiarities of the formation of their
structure and phase composition were discussed, and the
temperature boundaries of the stability of the
quasicrystalline phase in thin films were determined
under vacuum annealing for 1 h. It was found that the
quasicrystalline phase is formed in the temperature
range of 500 to 550 C. Further, we use precisely this
temperature range for annealing.
2.2. THE RESULTS OF IRRADIATION WITH
AN ENERGY OF 0.6 MJ/m
2
AND SUBSEQUENT
ANNEALING
The XRD results for a sample irradiated with energy
of 0.6 MJ/m
2
are presented in Fig. 3. It is seen that a
system of diffraction peaks has formed; the most intense
are located at 2 angles of approximately 37.5 and 39.5
degrees. Moreover, it is noticeable that the maxima are
composed of double or even triple lines.
20 30 40 50 60 70 80 90 100 110 120 130 140
-2
0
2
4
6
8
10
12
14
16
18
2, deg.
In
te
n
s
it
y
,
p
u
ls
/s
a
b
Fig. 1. XRD pattern in Cu-Kα (a) and electron
diffraction (b) from the coating in the initial state
The separation of overlapping maxima in the
New_Profile3.5 program made it possible to establish
that two phases are present in the film: the icosahedral
quasicrystalline phase and the 1/1 crystal-approximant
phase (W phase). From the ratio of their line intensities,
we conclude that these phases are contained in
approximately equal proportions.
In Fig. 3, reflections from the quasicrystalline phase
are indicated by double Kahn indices, and the W phase
is indicated by arrows. The icosahedral phase is
characterized by a quasicrystallinity parameter
aq = 0.5100 nm and a crystallite size about 100 nm as
calculated by the Selyakov-Scherrer formula based on
the half-width of the (20.32) reflection. The W crystal-
approximant phase has a lattice period aW = 1.41 nm
consistent with aq. It should be noted that the choice of
the (20.32) reflection is not accidental.
The question is that in quasicrystals the smearing of
the diffraction maximum depends not only on
microdispersity and microstrains, but also on the density
of phason defects [2]. The reflections with an increased
value of the modulus of Q (one of the components of
the six-dimensional diffraction vector of the icosahedral
structure) are most sensitive to the presence of phason
defects [14, 15]. The (20.32) reflection is not one of
such.
a
b
c
d
e
f
g
h
Fig. 2. Change in the surface morphology of the film coating after irradiation with hydrogen plasma and annealing:
the initial state (a, b), after irradiation with 0.6 MJ/m
2
(c, d) and subsequent annealing at 550C for 4 h (e, f)
and irradiation with 0.4 MJ/m
2
(g, h)
In the SEI images taken in the secondary electron
mode (see Fig. 2,c,d), one can observe a labyrinth
system consisting of two regions with different
contrasts. In the figure they are marked with a and b
letters. According to microanalysis, in the (a) region
the composition was the following: Ti – 23.8,
Zr – 14.5, Ni – 8.3, as well as Fe – 45.6, Ni – 8.3, and
Mn – 0.2 at.%. The presence of iron, nickel and
manganese contained in the steel substrate means that
the film thickness in this place is not more than 2 m.
In the (b) region, the composition turned out to be
different: Ti 52.6, Zr 30.7, and Ni 16.8 at.%. It
practically coincides with the composition of the initial
target. The absence of elements from the composition
of the substrate means that in this place the coating
thickness is more than 6 m. Thus, we can conclude
that the relief of the coating is a system of protrusions
(b) and depressions (a). Annealing the samples for 8 h
at 550 °C did not introduce any changes in the surface
morphology; the inhomogeneity in the thickness of the
sample was preserved.
In the backscattered electron images taken with a
semiconductor detector in the topo mode (see Fig. 2,e)
and in the compo mode (see Fig. 2,f), the system of
depressions (a) and protrusions (b) is manifested even
more clearly. In Fig. 2,f, the (a) areas, as expected, have
a darker contrast. In the SEI images, a crack system can
also be seen. Each of these areas has its own different
crack system. Upon transition from one region to
another, cracks break off (see Fig. 2,d). In the (a)
region, the cracks are smooth (marked by arrows in
Fig. 2,d), and in the other one – they are fractured and
branched.
Smooth cracks are usually characteristic of
amorphous glasses; in quasicrystals, they were first
observed in [4]. We assume that the (a) region
corresponds to the quasicrystalline region, and the (b)
region corresponds to the crystal-approximant phase.
Vacuum annealing for up to 8 h resulted in the shift
of quasicrystal reflections to smaller 2 angles, and,
accordingly, to the increase of the aq parameter to 0.513
nm. The lattice period of the W phase also changed to
aW = 1.4151 nm. Reflections from the approximant and
the quasicrystal are more clearly separated.
We assume that upon annealing, a partial diffusion
phase transformation of the crystal-approximant W
phase into a quasicrystal occurs. The change in the
diffraction pattern as a result of sequential irradiation
with 5 pulses with thermal loads of 0.1; 0.2; 0.3, and
0.4 MJ/m
2
are shown in Fig. 4.
30 35 40 45 50 55 60 65 70
0
50
100
150
200
250
300
350
*
(2
6
,4
1
)
(3
0
,4
5
)
(5
2
,8
4
)(2
0
,3
2
)
2, deg.
In
te
n
s
it
y
,
p
u
ls
/s
-F
e(1
8
,2
9
)
*
4
3
2
1
Fig. 4. A fragment of the diffraction pattern from a film
subjected to subsequent irradiation with 5 pulses with a
load of 0.1 (4), 0.2 (3), 0.3 (2), and 0.4 MJ/m
2
and vacuum annealing at 550 C for 1 h (1)
0,0 0,1 0,2 0,3 0,4
5,09
5,10
5,11
5,12
5,13
5,14
5,15
5,16
5,17
5,18
a
q
*1
0
-1
,
n
m
q, МJ/m
2
0,0 0,1 0,2 0,3 0,4
0,6
0,7
0,8
0,9
1,0
1,1
1,2
q, МJ/m
2
B
1
/2
,
d
e
g
.
Fig. 5. Change in the quasicrystallinity parameter as a
function of thermal load (q) for a thin film irradiated by
pulsed plasma flows
Fig. 6. Change in the half-width of the (20.32)
diffraction maximum of the quasicrystalline phase as a
function of the heat load (q) for a thin film irradiated by
pulsed plasma flow
34 36 38 40 42 44 46 48
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
(3
0
,4
5
)
(2
6
,4
1
)
(2
0
,3
2
)
2, deg.
In
te
n
s
it
y
,
p
u
ls
/s
(1
8
,2
9
) W
Fe
1
2
3
4
Fig. 3. A fragment of the diffraction pattern from a
film irradiated with 5 pulses with a load of 0.6 MJ/m
2
(1)
and vacuum annealing at 550 C for 1 h (2), 4 h (3),
and 8 h (4)
2.3. RESULTS OF PLASMA COATING
IRRADIATION
Indicing and interpretation of the diffraction patterns
indicates that after the first two irradiations, the
reflections from the W phase gradually disappear and
the reflections from the quasicrystalline phase increase.
They shift toward smaller angles and the of reflections
from the 2/1 approximant appear. When the load
increases to 0.3 MJ/m
2
, all reflections present are
indiced as belonging to the quasicrystalline phase. After
irradiation with 0.4 MJ/m
2
, the reflections from QC are
strongly shifted to the right, and reflections from the W
phase reappear. Additionally, the morphology of the
coating surface changes significantly (see Fig. 2,g,h). It
can be seen from the figure that the coating experienced
recrystallization. This fact is not surprising, since during
the irradiation, the coating surface can briefly heat up to
1800 C [16], and according to [17], eutectic melting in
the alloy should occur at about 810 C. Thus, the
surface layers had the ability to melt and solidify again.
As a result, the system almost returned to the state of the
structure, as after exposure to a load of 0.6 MJ/m
2
. A
change in the quasicrystallinity parameter correlates
with these data; it is presented in Fig. 5. It can be seen
that the change in aq is nonmonotonic. After the first
and second loadings, the parameter aq increases and
then begins to decrease, and ultimately reaches a value
such as after exposure to a load of 0.6 MJ/m
2
. It is
noteworthy that the total (annealing + the first two
irradiations) increase in the quasicrystallinity parameter
Δaq amounted to a significant value of 0.75∙10
-2
nm.
There is an opinion [2, 18–20] that the higher the
perfection of the icosahedral phase, the numerically
higher the value of the corresponding quasicrystallinity
parameter. It can be concluded that when heated to
relatively low temperatures (not higher than about
1000 C), we have a manifestation of an improvement
in the regular structure of the quasicrystalline phase.
When irradiated with 0.3 MJ/m
2
(short-term heating of
the surface to about 1350 C) we obtained a single-
phase quasicrystalline coating, but with a reduced value
of the parameter aq. Further exposure further reduces it.
It is known that the quasicrystallinity parameter linearly
increases with increasing average weighted atom size of
the icosahedral structure [21–24]. We believe that the
decrease in the quasicrystallinity parameter can be
explained by the predominance of the titanium content
over zirconium, which has a larger atom radius than
titanium. The authors [25] have a similar opinion.
The change in the half-width of the diffraction
maximum Δ(2) = В1/2 of the quasicrystalline phase
(Fig. 6) has somewhat different character. The width
В1/2 monotonously increases with increasing q to
0.3 MJ/m
2
, and then reaches saturation. According to
the calculation, the change in the half-width (indicated
in Fig. 6), may be due to a decrease in the size of the
coherent scattering length from 15 to 8 nm along the
normal to the film surface.
CONCLUSIONS
We experimentally worked out the possibility of the
formation of a quasicrystalline icosahedral phase and a
crystal-approximant phase in a film sample with a
thickness of h = 14.8 μm deposited on an Eurofer steel
substrate by dc-magnetron sputtering of a target with the
composition Ti52Zr30Ni18 (at%); the QC and W phases
were formed as a result of pulsed irradiation with
hydrogen plasma with a heat load of 0.6 MJ/m
2
. It was
found that after isothermal vacuum annealing at a
temperature of 550 °C, both the content of the
quasicrystalline phase and the perfection of its structure
increased; this manifests itself in an increase of the
quasicrystallinity parameter from 0.510 to 0.5137 nm.
The quasicrystalline phase turned out to be resistant to
pulsed irradiation with hydrogen plasma. An increase in
the heat load from 0.1 to 0.3 MJ/m
2
for five pulses with
a duration of 250 μs contributes to an increase in the
content of the quasicrystalline phase and an increase in
the quasicrystallinity parameter to 0.5175 nm. Pulse
thermal exposure increases the microdispersion of the
QC phase.
REFERENCES
1. W. Steurer, S. Deloudi. Crystallography of
Quasicrystals. Concepts, Methods and Structures.
Berlin: “Springer”, 2009, 384 p.
2. Z.M. Stadnik. Physical properties of
quasicrystals. Berlin: “Springer”, 1999, 365 р.
3. А.І. Устинов, С.А. Демченков, В.А. Теличко,
С.С. Полищук // Наносистеми, наноматеріали,
нанотехнології. 2012, т. 10, №2, 369 с.
4. S.V. Bazdyrieva et al. // Problems of Atomic
Science and Technology. Series “Plasma Physics”.
2015, N 1(95), р. 166-169.
5. S.V. Malykhin, V.V. Kondratenko, et al. //
Journal of nano- and electronic physics. 2019, v. 11,
N 3, p. 03009-030013.
6. H. Huang et al. // Vacuum. 2015, v. 122, p. 147-
153.
7. V. Azhazha et al. // Problems of Atomic Science
and Technology. Series “Physics of Radiation Effect
and Radiation Materials Science”. 2011, N 2(97),
p. 33-38.
8. Sh.H. Hannanov // FMM. 1993, v. 75, N 2,
p. 26-37.
9. V. Fournee et al. // J. Phys. D: Appl. Phys. 2005,
v. 38, p. R83-R106.
10. E.J. Widjaja et al. // Thin Solid Films. 2003,
v. 441, p. 63-71.
11. J. Cahn, D. Shechtman, D. Grafias. // J. Mat.
Res. 1986, v. 1, N 1, p. 30-54.
12. Powder Diffraction File. Swarthmore,
Pennsylvania / Ed. JCPDS, 1977–1988.
13. S.V. Malykhin et al. // Problems of Atomic
Science and Technology. Series “Plasma Physics”.
2019, N 1(119), р. 83-86.
14. A. Letoublon at al. // Europhys. Lett. 2001,
v. 54, N 6, p. 753-759.
15. M. Jono, Y. Matsuo, K. Yamamoto. // Phil.
Mag. 2001, v. 81, N 11, p. 2577-2590.
16. V.A. Makhlaj et al. // Physica Scripta. 2014,
v. T159, p. 014024-014029.
17. K.F. Kelton et al. // Journal of Non-Crystalline
Solids. 2002, v. 312-314, p. 305-308.
18. K.F. Kelton, W.J. Kim, R.M. Stroud. // Appl.
Phys. Lett. 1997, v. 70, p. 3230-3232.
19. R.G. Hennig, K.F. Kelton, A.E. Carlsson,
C.L. Henley Structure of the icosahedral Ti-Zr-Ni
quasicrystal // Physical Review B: Condensed Matter
and Materials Physics. 2003, v. 67, p. 134202/1-
134202/13.
20. J.B. Qiang, Y.M. Wang, D.H. Wang,
M. Kramer, P. Thiel, C. Dong. Quasicrystals in the
Ti-Zr-Ni alloy system // J. Non-Cryst. Solids. 2004,
v. 334 & 335, p. 223-227.
21. S. Yi and D. Kim. Stability and phase
transformations of icosahedral phase in a
41.5Zr41.5Ti17Ni alloy // J. Mater. Res. 2000, v. 15,
N 4, p. 892-897..
22. K.F. Kelton, A.K. Gangopadhyay, G.W. Lee,
L. Hannet, R.W. Hyers, S. Krishnan, M.B. Robinson,
J. Rogers, T.J. Rathz. X-ray and electrostatic levitation
undercooling studies in Ti-Zr-Ni quasicrystal forming
alloys // Journal of Non-Crystalline Solids. 2002,
v. 312-314, p. 305-308.
23. R. Nicula, A. Jianu, A.R. Biris, D. Lupu,
R. Manaila, D. Aevenyi, C. Kumpf, E. Burkel.
Hydrogen storage in icosahedral and related phases of
rapidly solidifited Ti-Zr-Ni alloys // European Physical
Journal B. 1998, v. 3, N 2, p. 1-5.
24. R. Nicula, A. Jianu, A.R. Biris, D. Lupu,
R. Manaila, D. Aevenyi, C. Kumpf, E. Burkel.
Hydrogen storage in icosahedral and related phases of
rapidly solidifited Ti-Zr-Ni alloys // European Physical
Journal B. 1998, v. 3, N 2, p. 1-5.
25. Y.K. Kuo et al. // Journal of Applied Physics.
2008, v. 104, p. 063705- 063711.
Article received 15.01.2020
ПОВЕДЕНИЕ ТОНКОЙ ПЛЕНКИ КВАЗИКРИСТАЛЛОВ И АППРОКСИМАНТНЫХ ФАЗ
СИСТЕМЫ Ti-Zr-Ni ПРИ РАДИАЦИОННО-ТЕРМИЧЕСКОМ ВОЗДЕЙСТВИИ
В РЕЖИМАХ ПЕРЕХОДНЫХ ПРОЦЕССОВ
С.В. Малыхин, В.A. Махлай, С.В. Суровицкий, И.Е. Гаркуша, С.С. Геращенко, В.В.Кондратенко,
И.А. Копылец, Е.Н. Зубарев, С.С. Борисова, А.В. Федченко
Методами рентгеновской дифракции и СЭМ изучены структурные и фазовые изменения в тонкой
пленке, полученной магнетронным распылением мишени состава Ti52Zr30Ni18 (ат.%) на подложке из
стали, при радиационно-термическом воздействии импульсной водородной плазмы на ускорителе КСПУ
Х-50. Отработана методика формирования квазикристаллической фазы и фазы кристалла-аппроксиманта в
результате скоростной закалки с помощью импульсного воздействия с тепловой нагрузкой 0,6 MДж/м
2
.
Изучены изменение параметров структуры и субструктуры, а также содержания указанных фаз при
изотермическом вакуумном отжиге при температуре 550 ºС, а также в результате облучения 5 импульсами
плазмы в интервале тепловой нагрузки 0,1…0,4 МДж/м
2
. Квазикристаллическая фаза оказалась устойчивой
к облучению водородной плазмой.
ПОВЕДІНКА ТОНКОЇ ПЛІВКИ КВАЗІКРИСТАЛІВ І АПРОКСИМАТИВНИХ ФАЗ
СИСТЕМИ Ti-Zr-Ni ПРИ РАДІАЦІЙНО-ТЕПЛОВОМУ ВПЛИВІ
В РЕЖИМАХ ПЕРЕХІДНИХ ПРОЦЕСІВ
С.В. Малихін, В.О. Махлай, С.В. Суровицький, І.Є. Гаркуша, С.С. Геращенко, В.В. Кондратенко,
І.А. Копилець, Є.М. Зубарєв, С.С. Борисова, А.В. Федченко
Методами рентгенівської дифракції та СЄМ вивчені структурні і фазові зміни в тонкій плівці, отриманої
магнетронним розпиленням мішені складу Ti52Zr30Ni18 (ат.%) на підкладці зі сталі, при радіаційно-
термічному впливі імпульсної водневої плазми на прискорювачі КСПП Х-50. Відпрацьована методика
формування квазікристалічної фази і фази кристала-апроксиманта в результаті швидкісного загартування за
допомогою імпульсного впливу з тепловим навантаженням 0,6 MДж/м
2
. Вивчено зміну параметрів
структури і субструктури, а також вмісту зазначених фаз при ізотермічному вакуумному відпалі при
температурі 550 ºС, а також в результаті опромінення 5 імпульсами плазми в інтервалі теплового
навантаження від 0,1 до 0,4 МДж/м
2
. Квазікристалічна фаза виявилася стійкою до опромінення водневою
плазмою.
|
| id | nasplib_isofts_kiev_ua-123456789-194355 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1562-6016 |
| language | English |
| last_indexed | 2025-12-07T18:24:29Z |
| publishDate | 2020 |
| publisher | Національний науковий центр «Харківський фізико-технічний інститут» НАН України |
| record_format | dspace |
| spelling | Malykhin, S.V. Makhlai, V.A. Surovitskiy, S.V. Garkusha, I.E. Herashchenko, S.S. Kondratenko, V.V. Kopylets, I.A. Zubarev, E.N. Borisova, S.S. Fedchenko, A.V. 2023-11-23T10:55:53Z 2023-11-23T10:55:53Z 2020 Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes / S.V. Malykhin, V.A. Makhlai, S.V. Surovitskiy, I.E. Garkusha, S.S. Herashchenko, V.V. Kondratenko, I.A. Kopylets, E.N. Zubarev, S.S. Borisova, A.V. Fedchenko // Problems of atomic science and tecnology. — 2020. — № 2. — С. 3-8. — Бібліогр.: 25 назв. — англ. 1562-6016 PACS: 52.40.HF https://nasplib.isofts.kiev.ua/handle/123456789/194355 X-ray diffraction and SEM microscopy were used to study the structural and phase changes in a thin film obtained by magnetron sputtering of a Ti52Zr30Ni18 target (at.%) on a steel substrate under the radiation-thermal influence of pulsed hydrogen plasma on an QSPA Kh-50 accelerator. A technique has been worked out for the formation of the quasicrystalline and crystal-approximant phases as a result of high-speed quenching using pulsed action with a heat load of 0.6 MJ/m². The changes in the contents of these phases as well as in their structure and substructure parameters were studied during isothermal vacuum annealing at a temperature of 550 ℃ and also as a result of irradiation with 5 plasma pulses in the range of heat load from 0.1 to 0.4 MJ/m². The quasicrystalline phase was found to be resistant to irradiation with hydrogen plasma. Методами рентгенівської дифракції та СЄМ вивчені структурні і фазові зміни в тонкій плівці, отриманої магнетронним розпиленням мішені складу Ti52Zr30Ni18 (ат.%) на підкладці зі сталі, при радіаційнотермічному впливі імпульсної водневої плазми на прискорювачі КСПП Х-50. Відпрацьована методика формування квазікристалічної фази і фази кристала-апроксиманта в результаті швидкісного загартування за допомогою імпульсного впливу з тепловим навантаженням 0,6 MДж/м². Вивчено зміну параметрів структури і субструктури, а також вмісту зазначених фаз при ізотермічному вакуумному відпалі при температурі 550 ℃, а також в результаті опромінення 5 імпульсами плазми в інтервалі теплового навантаження від 0,1 до 0,4 МДж/м². Квазікристалічна фаза виявилася стійкою до опромінення водневою плазмою. Методами рентгеновской дифракции и СЭМ изучены структурные и фазовые изменения в тонкой пленке, полученной магнетронным распылением мишени состава Ti52Zr30Ni18 (ат.%) на подложке из стали, при радиационно-термическом воздействии импульсной водородной плазмы на ускорителе КСПУ Х-50. Отработана методика формирования квазикристаллической фазы и фазы кристалла-аппроксиманта в результате скоростной закалки с помощью импульсного воздействия с тепловой нагрузкой 0,6 MДж/м². Изучены изменение параметров структуры и субструктуры, а также содержания указанных фаз при изотермическом вакуумном отжиге при температуре 550 ℃, а также в результате облучения 5 импульсами плазмы в интервале тепловой нагрузки 0,1…0,4 МДж/м². Квазикристаллическая фаза оказалась устойчивой к облучению водородной плазмой. en Національний науковий центр «Харківський фізико-технічний інститут» НАН України Вопросы атомной науки и техники Physics of radiation damages and effects in solids Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes Поведінка тонкої плівки квазікристалів і апроксимативних фаз системи Ti-Zr-Ni при радіаційно-тепловому впливі в режимах перехідних процесів Поведение тонкой пленки квазикристаллов и аппроксимантных фаз системы Ti-Zr-Ni при радиационно-термическом воздействии в режимах переходных процессов Article published earlier |
| spellingShingle | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes Malykhin, S.V. Makhlai, V.A. Surovitskiy, S.V. Garkusha, I.E. Herashchenko, S.S. Kondratenko, V.V. Kopylets, I.A. Zubarev, E.N. Borisova, S.S. Fedchenko, A.V. Physics of radiation damages and effects in solids |
| title | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| title_alt | Поведінка тонкої плівки квазікристалів і апроксимативних фаз системи Ti-Zr-Ni при радіаційно-тепловому впливі в режимах перехідних процесів Поведение тонкой пленки квазикристаллов и аппроксимантных фаз системы Ti-Zr-Ni при радиационно-термическом воздействии в режимах переходных процессов |
| title_full | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| title_fullStr | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| title_full_unstemmed | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| title_short | Behavior of the Ti-Zr-Ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| title_sort | behavior of the ti-zr-ni thin film containing quasicrystalline and approximant phases under radiative-thermal action in transition modes |
| topic | Physics of radiation damages and effects in solids |
| topic_facet | Physics of radiation damages and effects in solids |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/194355 |
| work_keys_str_mv | AT malykhinsv behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT makhlaiva behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT surovitskiysv behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT garkushaie behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT herashchenkoss behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT kondratenkovv behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT kopyletsia behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT zubareven behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT borisovass behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT fedchenkoav behaviorofthetizrnithinfilmcontainingquasicrystallineandapproximantphasesunderradiativethermalactionintransitionmodes AT malykhinsv povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT makhlaiva povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT surovitskiysv povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT garkushaie povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT herashchenkoss povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT kondratenkovv povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT kopyletsia povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT zubareven povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT borisovass povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT fedchenkoav povedínkatonkoíplívkikvazíkristalívíaproksimativnihfazsistemitizrnipriradíacíinoteplovomuvplivívrežimahperehídnihprocesív AT malykhinsv povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT makhlaiva povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT surovitskiysv povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT garkushaie povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT herashchenkoss povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT kondratenkovv povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT kopyletsia povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT zubareven povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT borisovass povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov AT fedchenkoav povedenietonkoiplenkikvazikristalloviapproksimantnyhfazsistemytizrnipriradiacionnotermičeskomvozdeistviivrežimahperehodnyhprocessov |