IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals
For the first time, information on the surface relief of the layered GaS and doped GaS:Yb single crystals subjected to gamma-irradiation was obtained using atomic force microscopy (AFM) and Fourier-transform infrared spectroscopy (FTIR). It was found that GaS is characterized by a non-uniform distri...
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| Datum: | 2019 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2019
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| Schriftenreihe: | Вопросы атомной науки и техники |
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/194934 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | IR-spectroscopy and AFM-microscopy of the surface of gamma-irradiated GaS and GaS:Yb layered single crystals / A.M. Pashayev, B.G. Tagiyev, R.S. Madatov, N.N. Gadzhieva, A.A. Aliev, F.G. Asadov // Problems of atomic science and technology. — 2019. — № 2. — С. 34-38. — Бібліогр.: 11 назв. — англ. |