Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impuritie...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214903 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals / G.P. Gaidar, P.I. Baranskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 123-128. — Бібліогр.: 24 назв. — англ. |
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