Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process h...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2017 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214904 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / A.V. Fomin, G.A. Pashchenko, M.Yu. Kravetskyi, I.G. Lutsyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 118-122. — Бібліогр.: 3 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under the assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the “effective” diffusion coefficient, providing an account of etchant convection.
|
|---|---|
| ISSN: | 1560-8034 |