Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process h...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214904 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / A.V. Fomin, G.A. Pashchenko, M.Yu. Kravetskyi, I.G. Lutsyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 118-122. — Бібліогр.: 3 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665481560784896 |
|---|---|
| author | Fomin, A.V. Pashchenko, G.A. Kravetskyi, M.Yu. Lutsyshyn, I.G. |
| author_facet | Fomin, A.V. Pashchenko, G.A. Kravetskyi, M.Yu. Lutsyshyn, I.G. |
| citation_txt | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / A.V. Fomin, G.A. Pashchenko, M.Yu. Kravetskyi, I.G. Lutsyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 118-122. — Бібліогр.: 3 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under the assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the “effective” diffusion coefficient, providing an account of etchant convection.
|
| first_indexed | 2026-03-21T14:44:15Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214904 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T14:44:15Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Fomin, A.V. Pashchenko, G.A. Kravetskyi, M.Yu. Lutsyshyn, I.G. 2026-03-03T11:02:26Z 2017 Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / A.V. Fomin, G.A. Pashchenko, M.Yu. Kravetskyi, I.G. Lutsyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 118-122. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS: 68.35.Fx, 68.47.Fg https://nasplib.isofts.kiev.ua/handle/123456789/214904 https://doi.org/10.15407/spqeo20.01.118 Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under the assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the “effective” diffusion coefficient, providing an account of etchant convection. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing Article published earlier |
| spellingShingle | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing Fomin, A.V. Pashchenko, G.A. Kravetskyi, M.Yu. Lutsyshyn, I.G. |
| title | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing |
| title_full | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing |
| title_fullStr | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing |
| title_full_unstemmed | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing |
| title_short | Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing |
| title_sort | model of smoothing roughness on gaas wafer surface by using nonabrasive chemical-and-mechanical polishing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214904 |
| work_keys_str_mv | AT fominav modelofsmoothingroughnessongaaswafersurfacebyusingnonabrasivechemicalandmechanicalpolishing AT pashchenkoga modelofsmoothingroughnessongaaswafersurfacebyusingnonabrasivechemicalandmechanicalpolishing AT kravetskyimyu modelofsmoothingroughnessongaaswafersurfacebyusingnonabrasivechemicalandmechanicalpolishing AT lutsyshynig modelofsmoothingroughnessongaaswafersurfacebyusingnonabrasivechemicalandmechanicalpolishing |