Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Fomin, A.V., Pashchenko, G.A., Kravetskyi, M.Yu., Lutsyshyn, I.G.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214904
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing / A.V. Fomin, G.A. Pashchenko, M.Yu. Kravetskyi, I.G. Lutsyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 118-122. — Бібліогр.: 3 назв. — англ.

Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process h...