Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experime...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214905 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb / S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 105-109. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples, the spectral response exhibits a pronounced increase in the short-wave region. The effect of annealing on the electrical and photoelectrical properties of n-InSb has been explained by the formation of InSb antisites.
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| ISSN: | 1560-8034 |