Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experime...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214905 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb / S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 105-109. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738736491528192 |
|---|---|
| author | Stariy, S.V. Sukach, A.V. Tetyorkin, V.V. Yukhymchuk, V.O. Stara, T.R. |
| author_facet | Stariy, S.V. Sukach, A.V. Tetyorkin, V.V. Yukhymchuk, V.O. Stara, T.R. |
| citation_txt | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb / S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 105-109. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples, the spectral response exhibits a pronounced increase in the short-wave region. The effect of annealing on the electrical and photoelectrical properties of n-InSb has been explained by the formation of InSb antisites.
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| first_indexed | 2026-03-21T19:35:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214905 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T19:35:27Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Stariy, S.V. Sukach, A.V. Tetyorkin, V.V. Yukhymchuk, V.O. Stara, T.R. 2026-03-03T11:02:35Z 2017 Effect of thermal annealing on electrical and photoelectrical properties of n-InSb / S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 105-109. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.72.Cc, 07.57.Kp https://nasplib.isofts.kiev.ua/handle/123456789/214905 https://doi.org/10.15407/spqeo20.01.105 InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experimental evidences have been obtained that this phenomenon has a bulk character. In annealed samples, the spectral response exhibits a pronounced increase in the short-wave region. The effect of annealing on the electrical and photoelectrical properties of n-InSb has been explained by the formation of InSb antisites. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of thermal annealing on electrical and photoelectrical properties of n-InSb Article published earlier |
| spellingShingle | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb Stariy, S.V. Sukach, A.V. Tetyorkin, V.V. Yukhymchuk, V.O. Stara, T.R. |
| title | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb |
| title_full | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb |
| title_fullStr | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb |
| title_full_unstemmed | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb |
| title_short | Effect of thermal annealing on electrical and photoelectrical properties of n-InSb |
| title_sort | effect of thermal annealing on electrical and photoelectrical properties of n-insb |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214905 |
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