Effect of thermal annealing on electrical and photoelectrical properties of n-InSb

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Stariy, S.V., Sukach, A.V., Tetyorkin, V.V., Yukhymchuk, V.O., Stara, T.R.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214905
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of thermal annealing on electrical and photoelectrical properties of n-InSb / S.V. Stariy, A.V. Sukach, V.V. Tetyorkin, V.O. Yukhymchuk, T.R. Stara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 105-109. — Бібліогр.: 20 назв. — англ.

InSb wafers of n-type conductivity were annealed at 300, 370, and 400 °C for 30 min in an open tube system under a flowing argon ambient. The conductivity type conversion is revealed for the first time in samples with the electron concentration ~1.0•10¹⁴ cm⁻³ for all annealing temperatures. Experime...