Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Korkishko, R.M., Sokolovskyi, I.O., Chernenko, V.V., Evstigneev, M.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214915
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, R.M. Korkishko, I.O. Sokolovskyi, V.V. Chernenko, and M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 34-40. — Бібліогр.: 8 назв. — англ.

The influence of non-radiative exciton recombination (NRER) on the photoconversion efficiency in silicon solar cells with short Shockley–Read–Hall lifetimes τSRH has been studied. It has been shown that the efficiency reduction due to this effect is stronger the shorter τSRH. The influence of NRER i...