Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2017
• Автори: Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Korkishko, R.M., Sokolovskyi, I.O., Chernenko, V.V., Evstigneev, M.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/214915
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, R.M. Korkishko, I.O. Sokolovskyi, V.V. Chernenko, and M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 1. — С. 34-40. — Бібліогр.: 8 назв. — англ.

The influence of non-radiative exciton recombination (NRER) on the photoconversion efficiency in silicon solar cells with short Shockley–Read–Hall lifetimes τSRH has been studied. It has been shown that the efficiency reduction due to this effect is stronger the shorter τSRH. The influence of NRER i...