Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Iliash, S.A., Hyrka, Yu.V., Kondratenko, S.V., Lysenko, V.S., Kozyrev, Yu.M., Lendel, V.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214921
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Relaxation of photovoltage in ITO-Ge-Si heterojunction with Ge nanostructured thin films / S.A. Iliash, Yu.V. Hyrka, S.V. Kondratenko, V.S. Lysenko, Yu.M. Kozyrev, V.V. Lendel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 259-261. — Бібліогр.: 6 назв. — англ.

The paper focuses on an experimental study of the photovoltage time decay in an ITO-Ge-Si heterojunction with a Ge nanostructured thin film. Kinetics under 650 nm excitation within the temperature range 80 to 290 K are successfully described by a single exponential function with temperature-dependen...