Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Osinsky, V., Masol, I., Lyahova, N., Suhoviy, N., Onachenko, M., Osinsky, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214922
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ.

For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing bas...