Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy
For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing bas...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Zitieren: | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. |
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| author | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| author_facet | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| citation_txt | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. |
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| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AᶦᶦᶦBᵛ direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 254-258.
doi: https://doi.org/10.15407/spqeo20.02.254
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
254
PACS 64.75.Nk, 77.84.Bw, 84.60.Jt, 85.60 Jb
Some technology aspects for quantum enestor
through AIIIBV multicomponent nanoepitaxy
V.I. Osinsky1, I.V. Masol1, N.N. Lyahova1, N.O. Suhoviy1, M.C. Onachenko1 A.V. Osinsky2
1Institute of Microdevices, NAS of Ukraine
3, Pivnichno-Syretska str., 04136 Kyiv, Ukraine
E-mail: lyahovann@gmail.com
2Agnitron Technology, Eden Prairie, MN, USA
Abstract. For the first time, it has been considered some quantum enestor technology
aspects concerning the integration approach for Si-CMOS and site-controlled
InGaN/GaN quantum dots, which provides the possibility to realize single photon
sources (SPS)/single photon detector (SPD) for quantum processing based on AIIIBV
direct bandgap multicomponent heterogeneous nanostructures and their light energy
storing capability, by an analogy with the photosynthetic process in plants.
Keywords: III-nitrides, LED, solid solutions, AIIIBV, energy storage.
Manuscript received 23.01.17; revised version received 27.04.17; accepted for
publication 14.06.17; published online 18.07.17.
1. Introduction
50 years ago in 1963-1966, technology of LEDs and
LDs based on multicomponent alloys InGaAsP [1] was
developed. This multicomponent approach gives a new
additional technological freedom in bandgap
engineering, crystal lattice and thermal expansion
coefficient matching, especially for quantum wells and
dots in III-nitrides (III-N) nanostructures, which is very
important for integration design.
Coherent light accumulation during photosynthesis
is a prime example of quantum effects in biology. It led
to the emergence of a field termed “quantum
biology” [2].
The enestors (energy storage processors of white
light) [3-5] can display the solution of energy efficiency
problems of diode lighting to a new level through the use
of high efficiency conversion and storage of solar
radiation energy in multilayer nanostructures of III-N
with monolithic integration.
In this paper, we have considered heterogeneous
AIIIBV direct bandgap multicomponent alloys in their
light accumulation possibility as an analogy of
photosynthetic process in plants as well as some
integration approach for Si-CMOS and site-controlled
InGaN/GaN quantum dots with their possibility of single
photon sources (SPS)/single photon detector (SPD)
quantum processing for the enestor.
2. Quantum analogy between heterogeneous alloys
and photosynthesizing systems in plants
Photosynthesis in plants has aroused enormous interest
in the structure–function relations, as they can serve as
blueprints for artificial light accumulation systems with
quantitative estimation. Conclusive structural informa-
tion is not available yet, reflecting the sample hetero-
geneity inherent to the natural system, nevertheless it is
found that there is strong size-dependence, so size of
grains is one of the critical parameters when regulating
photochemical functions [6, 7].
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 254-258.
doi: https://doi.org/10.15407/spqeo20.02.254
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
255
a b
Fig. 1. Analogy of plant photosynthesis process in their light collecting complexes: a) different colors arise from different
chromophores (optimal quantum path – black line); b) different colors arise from heterogeneous AIIIBV direct band gap
multicomponent alloy nanostructures (optimal quantum path –white line).
Sunlight energy is absorbed by special molecules,
like chlorophyll, that are embedded in proteins
comprising the photosynthetic unit. Hundreds of these
“chromospheres” (light absorbing molecules) are used to
accumulate sunlight and direct the excitation energy to
nature’s solar cells – proteins called as reaction centers.
Thus, these light-accumulating complexes compensate
for the mismatch between solar irradiance and the
optimal rate of reaction center operation (Fig. 1a).
Heterogeneity in direct bandgap multicomponent
semiconductors alloys (Fig. 1b) can have analogy of
photosynthetic process in plants [2, 8].
Integrated LED/SC matrixes can be made using
MOCVD on Si substrate with transistor microstructures
[9] and InGaN/GaN defect-free nanorods with site-
controlled quantum dots [10] due to heterogeneous
growth.
3. Direct bandgap multicomponent heterogeneous
nanostructures
Optoelectronic properties of heterogeneous structures
are determined by the properties of their heterogeneity.
Therefore, the spectra of recombination radiation can
have very wide bandwidth. So, one can consider these
solid solutions as a set of crystal areas of different
composition, which can interact like a classical
heterojunctions. It can be observed in BAlGaInNPAsSb
direct bandgap multicomponent alloys [4, 11] when
using cathodoluminescence with electron beam focused
up to 1 μm on the surface of the sample at T = 300 K in
different points spaced from each other at different
distances. There can take place a strong dependence of
the position and size of the bands of luminescence on the
excitation level. With increasing the excitation level, the
half-width of the luminescence line increases, the
maximum shifts to the low-energy region, and the high-
energy peak appears. With increasing the level of
excitation, the high-energy peak becomes predominant.
Let us consider the features of radiation
recombination in direct bandgap multicomponent solid
solutions due to availability of nano-homogeneous
regions of various sizes that makes quantum
superposition interaction possible.
If the composition fluctuates statistically at a
distance of within a few lattice parameters, we can
consider solid solutions as homogeneous crystals.
Generation and absorption of photons can be
characterized by a corresponding change in the energy of
inter-band transitions that are determined by the splitting
of the discrete levels of the solid solution atoms, when
they are combined in a lattice (Fig. 2).
If the size of homogeneous nanostructures is
approximately 10…50 nm, their properties are
determined by the energy gap between the
corresponding values of the edges of the conduction
band Ec and the valence band Ev of neighboring
nanostructures.
Fig. 2. Superlattice potentials of AIIIBV heterogeneous alloys
(Emin – for electron, Emax – for photon).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 254-258.
doi: https://doi.org/10.15407/spqeo20.02.254
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
256
Fig. 3. a) The optical model of heterogeneous solid solution nanostructures; b) the change of the photoluminescence intensity,
F (1), and the deviation from linearity of the bandgap, Eg /Eg0 (2), depending on the recrystallization transition number, n.
Heterogeneous solid solution nanostructures
(Fig. 3a) with linear dimensions equal to the mean-free
path length of photons represent optically inhomo-
geneous media. The bandgap changes at the boundaries
of heterogeneous solid solution nanostructures. So, the
radiation generated in the wide bandgap region 1, can
pass through the narrow band region 2 and be absorbed
with subsequent generation of photons, for which the
wide bandgap region 3 can be an optical window and
potential barrier. In addition, there is the inter-band drift
toward the narrow gap region under the action of
internal field proportional to the gradient Eg.
4. SPS/SPD quantum processing for enestor
InGaN/GaN quantum dots (QDs) exhibit large exciton
binding energy (>26 meV) and band offsets, making
them an ideal candidate for quantum information
processing at high temperatures with single-photon
emission. Photon qubits are almost decoherence-free,
and they can function at room temperature. In 2001, the
KLM scheme (after the inventors Knill–Laflamme–
Milburn) introduced a novel concept for photon-based
quantum information processing, where operation of
arbitrary photonic circuits is obtained just with single
SPS, SPD and linear optical components [12]. It was an
enhancement for this technology that led to the
implementation of small algorithms in this framework.
Photon losses in waveguides remain really the primary
source of errors. Abundant exertion was focused on the
optimization of single photon detectors and sources, too.
Photonic qubits are also promising applicants as
long-distance buses for quantum communication in
hybrid systems and quantum cryptography, manipulating
their outstanding speed and coherence properties.
Thus, most semiconductor QDs are epitaxially
grown using the self-assembled processes such as the
Stranski–Krastanov growth [13], which has very limited
control over the QDs’ positions and dimensions, making
them difficult to be employed at the device level
[14, 15].
We have demonstrated novel processes for
fabrication of site-controlled InGaN/GaN QDs on Si
(100) (Fig. 4) [10].
It can provide SPE with electrical injection from an
InGaN/GaN quantum dots in a single nanowires and
make it very attractive from the viewpoint of
compatibility and integration with silicon technology
(Fig. 5).
5. Light storage for enestor
Some technological aspects of MOSVD-graphene-like
2D AlCN (Fig. 6) for supercapacitors and thin film
batteries for quantum enestor have been developed. The
c-sapphire substrate was treated in an ammonia vapors
(horizontal reactor, EPIQUIP unit) at a temperature of
1050 °C for 20 min at the reactor pressure 20 mbar
within the temperature range T = 250…1000 °C [16].
Pirolysis of TMA leads to nanocarbonization of sapphire
and formation of aluminocarbonitride structures on the
surface of activated sapphire. Appearance of this
formation has been evidenced by the decrease of the
electric resistivity magnitude by one order and its
semiconductor anisotropic nature of the temperature
dependence.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 254-258.
doi: https://doi.org/10.15407/spqeo20.02.254
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
257
Fig. 4. Site-controlled InGaN/GaN QDs on Si (100).
Fig. 5. Fragment of Si-CMOS and III-N QD SPS/SPD integration for enestor.
Fig. 6. MOSVD-graphene-like 2D AlCN.
6. Conclusion
For the first first, it has been considered some quantum
enestor technology aspects concerning integration
approach for Si-CMOS and site-controlled InGaN/GaN
quantum dots with their possibility to serve as single
photon sources (SPS)/single photon detector (SPD)
quantum processing concerning AIIIBV direct bandgap
multicomponent heterogeneous nanostructures in their
light collecting possibility by an analogy of
photosynthetic process in plants.
References
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based on solid solution of indium phosphate-gallium
arsenide crystals. Trudy Akademii Nauk SSSR, ser.
fiz. 1966. 171-172. P. 317–319 (in Russian).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 254-258.
doi: https://doi.org/10.15407/spqeo20.02.254
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
258
2. Scholes G.D. Quantum-coherent electronic energy
transfer: Did nature think of it first? J. Phys. Chem.
Lett. 2010. 1, № 1. P. 2–8.
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| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
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| spelling | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. 2026-03-04T12:48:02Z 2017 Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 64.75.Nk, 77.84.Bw, 84.60.Jt, 85.60 Jb https://nasplib.isofts.kiev.ua/handle/123456789/214922 https://doi.org/10.15407/spqeo20.02.254 For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AᶦᶦᶦBᵛ direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy Article published earlier |
| spellingShingle | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| title | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_full | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_fullStr | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_full_unstemmed | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_short | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_sort | some technology aspects for quantum enestor through aᶦᶦᶦbᵛ multicomponent nanoepitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214922 |
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