Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy
For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing bas...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214922 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862660578573549568 |
|---|---|
| author | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| author_facet | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| citation_txt | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AᶦᶦᶦBᵛ direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants.
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| first_indexed | 2026-03-21T14:44:34Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214922 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T14:44:34Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. 2026-03-04T12:48:02Z 2017 Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy / V. Osinsky, I. Masol, N. Lyahova, N. Suhoviy, M. Onachenko, A. Osinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 254-258. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 64.75.Nk, 77.84.Bw, 84.60.Jt, 85.60 Jb https://nasplib.isofts.kiev.ua/handle/123456789/214922 https://doi.org/10.15407/spqeo20.02.254 For the first time, it has been considered some quantum enestor technology aspects concerning the integration approach for Si-CMOS and site-controlled InGaN/GaN quantum dots, which provides the possibility to realize single photon sources (SPS)/single photon detector (SPD) for quantum processing based on AᶦᶦᶦBᵛ direct bandgap multicomponent heterogeneous nanostructures and their light energy storing capability, by an analogy with the photosynthetic process in plants. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy Article published earlier |
| spellingShingle | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy Osinsky, V. Masol, I. Lyahova, N. Suhoviy, N. Onachenko, M. Osinsky, A. |
| title | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_full | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_fullStr | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_full_unstemmed | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_short | Some technology aspects for quantum enestor through AᶦᶦᶦBᵛ multicomponent nanoepitaxy |
| title_sort | some technology aspects for quantum enestor through aᶦᶦᶦbᵛ multicomponent nanoepitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214922 |
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