Analysis of a quantum well structure optical integrated device
This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optical infrared signal, a Heterojunction Phototransistor (HPT) to amplify the signal,...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214931 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Analysis of a quantum well structure optical integrated device / Sh.M. Eladl, M.H. Saad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 204-209. — Бібліогр.: 11 назв. — англ. |