Analysis of a quantum well structure optical integrated device
This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optical infrared signal, a Heterojunction Phototransistor (HPT) to amplify the signal,...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2017 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214931 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Analysis of a quantum well structure optical integrated device / Sh.M. Eladl, M.H. Saad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 204-209. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862647930702266368 |
|---|---|
| author | Eladl, Sh.M. Saad, M.H. |
| author_facet | Eladl, Sh.M. Saad, M.H. |
| citation_txt | Analysis of a quantum well structure optical integrated device / Sh.M. Eladl, M.H. Saad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 204-209. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optical infrared signal, a Heterojunction Phototransistor (HPT) to amplify the signal, and a Light Emitting Diode (LED) to emit this signal in a visible form. The model is based on the transient behavior of the constituent parts of the structure. The dominant pole approximation scheme is used to reduce its transfer function. The convolution theorem is used to get the overall transient response of the device under consideration. All interesting parameters concerning the transient response, rise time, and output derivatives are theoretically investigated. The results show that the overall transient behavior, output derivative, and rise time of the considered structure are approximately the same as those of the constituent device possessing the lowest cutoff frequency. This type of model can be applied with high sensitivity in the upconversion of infrared or far infrared range for image signal processing.
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| first_indexed | 2026-03-21T13:44:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214931 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:44:50Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Eladl, Sh.M. Saad, M.H. 2026-03-04T12:52:31Z 2017 Analysis of a quantum well structure optical integrated device / Sh.M. Eladl, M.H. Saad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 204-209. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 07.57.Kp, 85.35.Be, 85.60.Dw, 85.60.Jb https://nasplib.isofts.kiev.ua/handle/123456789/214931 https://doi.org/10.15407/spqeo20.02.204 This paper demonstrates theoretical modeling of a quantum well structure optical integrated device. The constituent devices of the developed structure are a Quantum Well Infrared Photodetector (QWIP) to detect the optical infrared signal, a Heterojunction Phototransistor (HPT) to amplify the signal, and a Light Emitting Diode (LED) to emit this signal in a visible form. The model is based on the transient behavior of the constituent parts of the structure. The dominant pole approximation scheme is used to reduce its transfer function. The convolution theorem is used to get the overall transient response of the device under consideration. All interesting parameters concerning the transient response, rise time, and output derivatives are theoretically investigated. The results show that the overall transient behavior, output derivative, and rise time of the considered structure are approximately the same as those of the constituent device possessing the lowest cutoff frequency. This type of model can be applied with high sensitivity in the upconversion of infrared or far infrared range for image signal processing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Analysis of a quantum well structure optical integrated device Article published earlier |
| spellingShingle | Analysis of a quantum well structure optical integrated device Eladl, Sh.M. Saad, M.H. |
| title | Analysis of a quantum well structure optical integrated device |
| title_full | Analysis of a quantum well structure optical integrated device |
| title_fullStr | Analysis of a quantum well structure optical integrated device |
| title_full_unstemmed | Analysis of a quantum well structure optical integrated device |
| title_short | Analysis of a quantum well structure optical integrated device |
| title_sort | analysis of a quantum well structure optical integrated device |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214931 |
| work_keys_str_mv | AT eladlshm analysisofaquantumwellstructureopticalintegrateddevice AT saadmh analysisofaquantumwellstructureopticalintegrateddevice |