Nanostructuring the SiOₓ layers by using laser-induced self-organization
The processes of laser-induced transformation of SiOₓ oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO₂ oxide matrix under irradiation by nanosecond pulses of YAG:Nd⁺³-laser were shown. Laser rad...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214936 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nanostructuring the SiOₓ layers by using laser-induced self-organization / O.V. Steblova, L.L. Fedorenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 179-184. — Бібліогр.: 27 назв. — англ. |