Nanostructuring the SiOₓ layers by using laser-induced self-organization
The processes of laser-induced transformation of SiOₓ oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO₂ oxide matrix under irradiation by nanosecond pulses of YAG:Nd⁺³-laser were shown. Laser rad...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Цитувати: | Nanostructuring the SiOₓ layers by using laser-induced self-organization / O.V. Steblova, L.L. Fedorenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 179-184. — Бібліогр.: 27 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860292475888861184 |
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| author | Steblova, O.V. Fedorenko, L.L. Evtukh, A.A. |
| author_facet | Steblova, O.V. Fedorenko, L.L. Evtukh, A.A. |
| citation_txt | Nanostructuring the SiOₓ layers by using laser-induced self-organization / O.V. Steblova, L.L. Fedorenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 179-184. — Бібліогр.: 27 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The processes of laser-induced transformation of SiOₓ oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO₂ oxide matrix under irradiation by nanosecond pulses of YAG:Nd⁺³-laser were shown. Laser radiation at the fundamental wavelength, λ₁ = 1064 nm, and second harmonic, λ₂ = 532 nm, was applied at researches. The size and surface concentration of nanofragments depend on the intensity and wavelength of the laser irradiation and have been determined from experimental data based on atomic force microscopy, infrared transmission spectra, and electrophysical measurements. SiOₓ nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticle formation occur mainly through the generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock.
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| first_indexed | 2026-03-20T16:15:33Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
179
PACS 61.72.V, 73.40
Nanostructuring the SiOx layers
by using laser-induced self-organization
O.V. Steblova1
, L.L. Fedorenko2, A.A. Evtukh2
1Taras Shevchenko Kyiv National University, Institute of High Technologies,
Kyiv, Ukraine, e-mail: steblolia@gmail.com
2V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine; e-mail: leonfdrn@gmail.com
Abstract. The processes of laser-induced transformation of SiOx oxide layers into the
nanocomposite ones were studied. The possibility of phase separation in the form of Si
nanocrystals surrounded by corresponding SiO2 oxide matrix under irradiation by
nanosecond pulses of YAG:Nd+3-laser were shown. Laser radiation at the fundamental
wavelength, λ1 = 1064 nm, and second harmonic, λ2 = 532 nm, were applied at
researches. The size and surface concentration of nanofragments dependences on the
intensity and wavelength of the laser irradiation have been determined from experimental
data based on atomic force microscopy, infrared transmission spectra and electro-
physical measurements. SiOx nanocomposite layers containing Si nanoparticles, the size
of which depends on laser beam intensity and wavelength, have been obtained. The
processes of nanoparticles formation occur mainly through generation and mass transfer
of interstitial atoms in the solid mode (before the melting point threshold) due to the
effect of laser thermal shock.
Keywords: nanocrystal, oxides, nanocomposite, laser thermal shock, mass transfer.
Manuscript received received 01.02.17; revised version received 10.04.17; accepted for
publication 14.06.17; published online 18.07.17.
1. Introduction
Structures with silicon nanoparticles that are grown
inside SiO2 draw researchers’ attention due to prospects
of creation on their basis functionally new nano-
electronic devices such as nanocrystal memory [1, 2],
single-electron transistors [3], Si-based LEDs and laser
[4-6]. The fabrication route of Si nanocrystal formation
generally consists of two steps. First, SiOx films are
made either by deposition [7-12], or by implanting Si
atoms into pure silica [6]. Then, nc-Si is obtained by
thermal annealing of the layers in the inert (argon or
nitrogen) atmosphere. The size distribution and number
of Si nanocrystals were found to strongly depend both
on the content of excess Si into SiOx films and on
annealing temperature and duration. The laser annealing
for transformation of SiOx film into the nanocomposite
one containing Si nanoclusters in a SiO2 matrix are
investigated as an alternative annealing method [12-18].
Among the newest technologies of recent years, the
direction of laser induced nanostructuring is intensively
developed as non-destructive method for relatively soft
technological impact. At the same time, the increased
interest in nanostructuring the oxides is explained by the
possibility of their transformation into nanocomposite
layers containing nanocrystals surrounded by
corresponding oxide matrix. For example, Zn
nanocrystals in the ZnO matrix [19], Ti in TiO2, Si in
SiO2 matrix [20]. It is already known from literature,
including our work [16], that there are experiments
demonstrating the possibility of non-ablative laser-
stimulated phase separation of SiOx oxide film (Si-
enriched silicon oxide) with appearance of Si
nanoclusters and SiO2 oxide matrix at laser intensities
close to the threshold point, but non-destructive for the
SiOx/Si system.
In case of thermal annealing the Si nanocrystals are
formed over all the area substrate. The laser annealing
with intensities lower than the destruction threshold has
been used here for the creation of structures with silicon
nanoclusters on local areas of wafer. The influence of
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
180
laser intensity on SiOx film structure transformation and
its electrical properties are presented.
2. Experimental
The SiOx/Si structures were obtained by ion plasma
sputtering (IPS) of Si target in O2+Ar ambient on single
crystalline Si substrate (n-type, ρ = 4.5 Ohm⋅cm (100)).
The thickness of SiOx film was d = 100 nm and
stoichiometry index was x = 0.98. Investigations of the
changes of surface morphology, structural, optical and
electrical properties of the SiOx/Si system were
performed before and after laser irradiation. The atomic
force microscopy (AFM) (Nanoscope IIIa, Digital
Instruments, Santa-Barbara, IR Fourier spectrometer BX
(firm Perkin-Elmer) in the frequency range of
800…1400 cm–1, scanning electron microscope (SEM)
(TescanMira) using 15 kV electron beam, optical
microscope Nikon LV150 were used for investigations
of the films. The standard YAG:Nd+3-laser with the base
frequency λ = 1064 nm and second harmonic λ = 532 nm
were used as an irradiation source.
Laser irradiation was carried out at the room
temperature and atmospheric pressure. The samples with
the Si/SiOx structures were irradiated from the SiOx side
using the fundamental (λ = 1064 nm, τ = 15 ns) and the
second harmonic (λ = 532 nm, τ = 10 ns) frequencies of
the YAG:Nd+3 laser in the Q-modulation mode with the
intensity in the range from 10 to 110 MW/cm2. This
range of intensities was chosen to achieve a non-
destructive annealing of SiOx layer using Si substrate as
a heat source. Laser irradiation with the wavelength used
is not adsorbed by the SiOx film but mainly by Si, and,
in such a way, it heated the substrate. In this case, the Si
substrate is a heat source for the film. The total influence
of laser beam on local place was τ = 15 ns and τ = 10 ns
in case of λ = 1064 nm and λ = 532 nm, correspondding-
ly. The level of the laser beam intensity was controlled
by defocusing and/or by the neutral grey optical filters.
The pulse laser energy and duration were measured
using a conventional pulse energy meter and coaxial
photo-element with oscilloscope.
3. Laser-stimulated phase separation
of the SiOx/Si structure
The fact of nanofragmentation of the SiOx film is con-
firmed by correlation between formation of nanofrag-
ments on the surface of SiOx/Si structure (see AFM image
in Fig. 1b) and a shortwave shift of the IR transmission
spectrum minimum from 1032 to 1073 cm–1 (Fig. 2). As
seen from Fig. 2, the intensity of IR spectrum minimum
increases with shifting into the high-frequency region, and
absorption area becomes wider after the laser annealing.
The shift of minimum position from νm1 = 1032 cm−1
(x = 0.98) to νm2 = 1073 сm–1 (x = 1.76) is observed. This
shift of the frequency minimum is indicative of phase
separation and transformation of the SiOx film [21]. As a
result of the structure transformation, the film properties
are significantly changed.
(a)
(b)
(c)
Fig. 1. AFM image of SiOx-film surface morphology before (a)
and after laser (b, c) annealing with the irradiation intensity I =
16 MW/cm2: b) λ1 = 1064 nm, h = 85 nm and c) λ2 = 532 nm,
h = 5 nm, nSi = 2.7·1010 сm–2 (α1 = 10 сm–1, α2 = 104 сm–1).
Ith.in (λ1) = 14 MW/cm2, Ith.in (λ2) = 6 MW/cm2; Ith.dam (λ1) =
114 MW/cm2, Ith.dam (λ2) = 54 MW/cm2 (Ith.in is the light inten-
sity for beginning of morphology changes; Ith.dam is the light
intensity for destructive damage).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
181
Fig. 2. IR transmission spectra of SiOx film (x = 0.98) before
(1) and after (2) laser annealing at the intensity I =
100 MW/cm2 (λ2 = 1064 nm).
The detail analysis of IR spectra was performed
being based on the mathematical decomposition of the
optical density band by elements of the Gaussian profile.
It was shown that the main absorption band of the initial
SiOx film consists of seven elementary sub-bands
resulting from transverse (TO mode) and longitudinal
(LO mode) valence oscillations of bridging oxygen that
is the part of the molecular complexes Si-Oy-Si4–y
(1 ≤ y ≤ 4) (Fig. 3). The main contribution to the IR
absorption band of the initial film is given by the sub-
bands 1, 2, 3, 4, 5 that correspond to complexes of
unoxidized silicon (Si-O-Si3, Si-O2-Si2, Si-O3-Si). Such
spectral distribution is kept up to the first threshold of
intensity (14 MW/cm2).
As a result of laser annealing at the intensity
I ≥ 14 MW/cm2 (λ1 = 1064 nm), the initial silicon-
enriched SiOx (x = 0.98) film begins to transform into
the nanocomposite SiOx(Si) film. After irradiation with
the intensity I = 100 MW/cm2, the stoichiometric index
becomes x ≈ 1.76, and significant redistribution of
elementary band intensities is observed. The integrated
intensity of the sub-band associated with Si-O-Si3
complexes decreased by 6.5 times, and sub-bands
associated with the Si-O2-Si2, Si-O3-Si complexes
disappeared. The relative area of sub-bands caused by
Si-O TO vibration modes from the SiO4 tetrahedron
combined into 4- and 6-fold rings is approximately 68%,
and the area of Si-O-Si sub-band is 14.6% of the total
spectrum area indicating formation of SiO2 phase
regions, which correlates with appearance of nano-Si
crystals on the surface.
Irradiation with the YAG:Nd+3 laser at two
wavelengths λ1 = 1064 nm and λ2 = 532 nm was applied
in this experiment. At the high intensity level of the
fundamental wavelength (λ1 = 1064 nm), the substrate
(Si) was mainly heated, in the second case (λ2 = 532 nm)
as substrate as well as SiOx film was heated. In both
cases, the effect of intensive formation of the
nanostructure was carried out. In the first case (λ1 =
1064 nm), the intensive formation of nanoparticles begin
at the light intensity I = 16 MW/cm2 with the average
cross-section diameter d = 70 nm and the height h =
85 nm (Fig. 1b). In the second case (λ2 = 532 nm), with
the same I values, d = 7 nm and h = 5 nm were obtained
(Fig. 1c).
The thresholds of beginning of the morphology
changes were sufficiently different: Ith1 = 14 MW/cm2
and Ith2 = 6 MW/cm2 for λ1 = 1064 nm and λ2 = 532 nm,
accordingly. Besides, the destructive damage thresholds
were also significantly different: Ith1 = 114 MW/cm2 and
Ith2 = 54 MW/cm2. It is connected with the large
difference between the absorption coefficients (α1 =
10 сm−1, α2 = 104 сm−1) for two laser wavelengths (λ1 =
1064 nm, λ2 = 532 nm), accordingly, at least, at not very
high intensity levels.
Fig. 3. Mathematical decomposition of optical density bands of oxide films by Gaussian shape components: a) the initial sample
(x = 0.98); b) the sample annealed with the laser intensity 100 MW/cm2 (x = 1.76).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
182
As a rule, there is a tendency in nanocrystal size
growth with increasing of the intensity (for example:
λ1 = 1064 nm: I = 16 MW/cm2, h = 85 nm; I =
110 MW/cm2, h = 100 nm; λ2 = 532 nm: I =
16 MW/cm2, h = 5 nm; I = 50 MW/cm2, h = 30 nm).
In case of stationary illumination at the wavelength
λ1 = 1064 nm, the temperature of the surface is lower,
and the size of nanoclusters, as it is expected, has to be
smaller in comparison with that under illumination at
λ2 = 532 nm. But in our experiments with nanosecond
pulse illumination, there is a non-stationary process, and
the role of temperature and pressure gradients is critical.
The mechanism of Si nanocrystals formation is as
follows. Because the pulsed laser irradiation leads to
rapid and non-homogeneous heating the sample, the
concentration of interstitial Si grows on the surface
through the generation and redistribution of an excessive
SiI due to the effect of laser thermal shock [22-24]. Laser
thermal shock effect manifests itself in certainty of the
transfer direction of the impurity atoms or defects in the
crystal lattice under conditions of temperature dT/dx and
pressure dP/dx gradients action. The transfer direction
depends on the ratio of the covalent radii of impurity
atom to that of the basic substance atoms. The force
acting on the atom is:
x
TakF
′∂
∂
×−= , ⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
ρ
ρ′
−≈ 1ka , (1)
where ρ, ρ' are the covalent radii of substance and defect
atoms, accordingly.
The atoms with larger covalent radius, as it follows
from (1), move to a maximum temperature in the field of
gradients of temperature and pressure, created by laser
irradiation, while smaller atoms move against the
gradient (to lower temperatures) (Fig. 4). As a result, the
layer or island enriched with SiI is formed on the surface.
The results on influence of laser annealing on the
conductivity of SiOx films are illustrated in Fig. 5, where
the current density on the intensity of laser irradiation
(Т = 300 K) with electric field as a parameter are shown.
At the beginning, the increase in current density
with growth of laser irradiation intensity to І =
17 МW/сm2 is observed. The analysis of IR spectra has
been shown that after annealing at I = 10 МW/сm2 the
structure, in comparison with the original film, wasn’t
changed. The electron traps in the film are the
conduction states [25]. The decline in current density is
observed with increasing the intensity of laser irradiation
from 17 to 35 МW/сm2. It is caused by the fact that the
additional silicon-oxygen bonds are formed with the
growing intensity, the concentration of Si-O2-Si2, Si-O3-
Si complexes are reduced and, as a result, the density of
electron traps are decreased [26].
Within the range 35 < І < 50 МW/сm2 the current
density is almost unchanged. At this stage of laser
annealing, the phase of stoichiometric silicon oxide SiO2
are formed. This phase is represented by complexes of
SiO4 tetrahedrons combined into 4- and 6-fold rings, and
Si nanocrystals [21, 26]. As a result of these changes, the
higher density of the interface states between SiO2 and
Si nanocrystals has been appeared, and the number of
conductive states in the amorphous SiOx matrix are
reduced. Beginning from І ≥ 50 МW/сm2, the
conductivity has been increased. The reason for this
current behavior is the further structural transformations
that lead to the tunnel mechanism of electron transport
through Si nanocrystals.
As been determined, the basic mechanisms of
conductivity through SiOx films after laser annealing are
the electron hopping with variable length (the Mott law),
space-charge limited current (SCLC), Pool–Frenkel
conductivity, and Fowler–Nordheim tunneling in
dependence on measurement temperature and electric
field [27].
Fig. 4. Illustration of the mass-transfer in conditions of the laser thermal shock effect: a) ρim < ρbm, b) ρim > ρbm, ρSi = 1.17 Å,
ρO = 0.66 Å (ρim is the radius of impurity atom, ρbm is the radius of a base material atom).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
183
Fig. 5. The dependences of the current density through SiOx
film on the laser irradiation intensity (λ2 = 1064 nm, t = 10 ns)
at fixed values of the electric field: 1 – E = 2⋅105V/cm, 2 – E =
4⋅105V/cm.
4. Conclusions
The possibility of laser-induced nanostructuring of the
SiOx oxide has been shown. The average size of
nanoparticles cross-section after laser annealing with the
fundamental wavelength λ1 = 1064 nm was d = 70 nm,
and the height h = 85 nm. In the second case (λ2 =
532 nm), after annealing with the same I values d =
7 nm, and h = 5 nm have been obtained. The thresholds
of structural changes beginning and transformation of
the SiOx film were determined. The influence of laser
intensity up to 100 MW/cm2 on structural changes,
surface nanocrystal concentration and conductivity was
investigated. Laser induced changes of the srtuctural,
optical and electro-physical properties of SiOx have been
explained by generation, redistribution and agglomera-
tion of interstitial Si atoms in solid phase due to the self-
organization processes caused by the laser thermal shock
effect in the core laser treatment without the need of
super high-vacuum chambers and additional thermal
heater.
Acknowledgment
The authors thanks to Dr. P. Litvin, and Dr. S. Zlobin for
AFM and IR measurements.
References
1. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabbe
E.F., Chan K. A silicon nanocrystals based
memory. Appl. Phys. Lett. 1996. 68, No. 10.
P. 1377–1379.
2. Hanafi H.I., Tiwari S., Khan I. Fast and long
retention-time nanocrystal memory. IEEE Trans.
Electron. Devices. 1996. 43. P. 1553–1558.
3. She M., King T.-J. Impact of crystal size and tunnel
dielectric on semiconductor nanocrystal memory
performance. IEEE Trans. Electron. Devices. 2003.
50, No. 9. P. 1934–1940.
4. Canham L. Gaining light from silicon. Nature.
2000. 408. P. 411–412.
5. Ng W.L., Lourenço M.A., Gwilliam R.M., Ledain
S., Shao G., and Homewood K.P. An efficient
room-temperature silicon-based light-emitting
diode. Nature. 2001. 410(6825). P. 192–194.
6. Pavesi L., Negro L. Dal, Mazzoleni C., Franzò G.,
Priolo F. Optical gain in silicon nanocrystals.
Nature. 2000. 408. P. 440.
7. Yun F., Hinds B.J., Hatatani S., Oda S., Zhao Q.X.,
Willander M. Study of structural and optical
properties of nanocrystalline silicon embedded in
SiO2. Thin Solid Films. 2000. 375. P. 137.
8. Koshizaki N., Hiroyuki H., Oyama T. ХPS
characterization and optical properties of Si/SiO2,
Si/Al2O3 and Si/MgO co-sputtered films. Thin
Solid Films. 1998. 325. P. 130.
9. Rinnert H., Vergnat M., Marchal G. Structure and
optical properties of amorphous SiOx thin films
prepared by co-evaporation of Si and SiO. Mater.
Sci. Eng. B. 2000. 484. P. 69–70.
10. Bell F.G., Ley L. Photoemission study of SiOx
(0 ≤ x ≤ 2) alloys. Phys. Rev. B. 1988. 37. P. 8383.
11. Bratus’ O.L., Evtukh A.A., Lytvyn O.S., Voitovych
M.V., Yukhymchuk V.O. Structural properties of
nanocomposite SiO2(Si) films obtained by ion-
plasma sputtering and thermal annealing.
Semiconductor Physics, Quantum Electronics &
Optoelectronics. 2011. 14. P. 247–255.
12. Rochet F., Dufour G., Roulet H., Pelloie B.,
Perrière J., Fogarassy E., Slaoui A., Froment M.
Modification of SiO through room-temperature
plasma treatments, rapid thermal annealings, and
laser irradiation in a non-oxidizing atmosphere.
Phys. Rev. B. 1988. 37. P. 6468.
13. Gallas B., Kao C.-C., Fisson S., Vuye G., Rivory J.,
Bernard Y., Belouet C. Laser annealing of SiOx
thin films. Appl. Surf. Sci. 2002. 185. P. 317–320.
14. Janotta A., Dikce Y., Schmidt M., Eisele C.,
Stutzmann M. Light-induced modification of a-
SiOx: Laser crystallization. J. Appl. Phys. 2004. 95.
P. 4060–4068.
15. Korchagina T.T., Gutakovsky A.K., Fedina L.I.,
Neklyudova M.A., Volodin V.A. Crystallization of
amorphous Si nanoclusters in SiO films using
femtosecond laser pulse annealings. J. Nanosci.
Nanotechnol. 2012. 12. P. 8694–8699.
16. Gavrylyuk O.O., Semchyk O.Yu., Bratus O.L.,
Evtukh A.A., Steblova O.V., Fedorenko L.L. Study
of thermophysical properties of crystalline silicon
and silicon-rich silicon oxide layers. Appl. Surf.
Sci. 2014. 302. P. 213–215.
17. Pavesi L. Routes toward silicon-based laser. Mater.
Today. 2005. 8, No. 1. P. 18–25.
18. Daniel C., Mucklich F., Liu Z. Periodical micro-
nano-structuring of metallic surfaces by interfering
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 179-184.
doi: https://doi.org/10.15407/spqeo20.02.179
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
184
laser beams. Appl. Surf. Sci. 2003. 208–209.
P. 317–321.
19. Medvid A., Fedorenko L. Optical excitation of the
surface plasmon-polariton resonance in Zn
nanoparticles formed by laser radiation in ZnO
crystal. IX Intern. Conf. “Topical Problems of
Semiconductor Physics”, Truskavets, Ukraine, May
16–20, 2016. P. 113–114.
20. Shimizu A., Kanbara M., Hada M., and Kasuga M.
ZnO green light emitting diode. Jpn. J. Appl. Phys.
1978. 17. P. 1435.
21. Lisovskii I.P., Litovchenko V.G., Lozinskii V.B.,
Frolov S.I., Flietner H., Fussel W., Schmidt E. IR
study of short-range and local order in SiO2 and
SiOx films. J. Non-Crystalline Solids. 1995. 187. P.
91–95.
22. Fedorenko L.L., Bolgov S.S., Malyutenko V.K.
Activation of photoconductivity of InSb by laser
radiation. Ukr. J. Phys. 1975. 14, №.12. P. 2041–
2044.
23. Voronkov V.P., Gurchenok G.A. Impurity
diffusion in semiconductors at laser annealing.
Phys. Technol. Semicond. 1990. 24. P. 1831–1834.
24. Medvid’A., Fedorenko L.L., Snitka V. The
mechanism of generation of donor centers in p-
InSb by laser radiation. Appl. Surf. Sci. 1999. 142.
P. 280–285.
25. Steblova O.V., Evtukh A.A., Bratus’O.L. et al.
Transformation of SiOx films into nanocomposite
SiO2(Si) films under thermal and laser annealing.
Semiconductor Physics, Quantum Electronics &
Optoelectronics. 2014. 17, No. 3. P. 295–300.
26. Hubner K. Chemical bond and related properties of
SiO2. VII. Structure and electronic properties of the
SiOx region of Si-SiO2 interfaces. physica status
solidi (a). 1980. 61, No. 2. P. 665–671.
27. Kizjak A.Yu., Evtukh A.A., Steblova O.V.,
Pedchenko Yu.M. Electron transport through thin
SiO2 films containing Si nanoclusters. J. Nano Res.
2016. 39. P. 169–177.
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| id | nasplib_isofts_kiev_ua-123456789-214936 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-20T16:15:33Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Steblova, O.V. Fedorenko, L.L. Evtukh, A.A. 2026-03-04T12:54:06Z 2017 Nanostructuring the SiOₓ layers by using laser-induced self-organization / O.V. Steblova, L.L. Fedorenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 179-184. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS: 61.72.V, 73.40 https://nasplib.isofts.kiev.ua/handle/123456789/214936 https://doi.org/10.15407/spqeo20.02.179 The processes of laser-induced transformation of SiOₓ oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO₂ oxide matrix under irradiation by nanosecond pulses of YAG:Nd⁺³-laser were shown. Laser radiation at the fundamental wavelength, λ₁ = 1064 nm, and second harmonic, λ₂ = 532 nm, was applied at researches. The size and surface concentration of nanofragments depend on the intensity and wavelength of the laser irradiation and have been determined from experimental data based on atomic force microscopy, infrared transmission spectra, and electrophysical measurements. SiOₓ nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticle formation occur mainly through the generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock. The authors thank Dr. P. Litvin and Dr. S. Zlobin for AFM and IR measurements. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nanostructuring the SiOₓ layers by using laser-induced self-organization Article published earlier |
| spellingShingle | Nanostructuring the SiOₓ layers by using laser-induced self-organization Steblova, O.V. Fedorenko, L.L. Evtukh, A.A. |
| title | Nanostructuring the SiOₓ layers by using laser-induced self-organization |
| title_full | Nanostructuring the SiOₓ layers by using laser-induced self-organization |
| title_fullStr | Nanostructuring the SiOₓ layers by using laser-induced self-organization |
| title_full_unstemmed | Nanostructuring the SiOₓ layers by using laser-induced self-organization |
| title_short | Nanostructuring the SiOₓ layers by using laser-induced self-organization |
| title_sort | nanostructuring the sioₓ layers by using laser-induced self-organization |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214936 |
| work_keys_str_mv | AT steblovaov nanostructuringthesioxlayersbyusinglaserinducedselforganization AT fedorenkoll nanostructuringthesioxlayersbyusinglaserinducedselforganization AT evtukhaa nanostructuringthesioxlayersbyusinglaserinducedselforganization |