Nanostructuring the SiOₓ layers by using laser-induced self-organization

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Steblova, O.V., Fedorenko, L.L., Evtukh, A.A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214936
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nanostructuring the SiOₓ layers by using laser-induced self-organization / O.V. Steblova, L.L. Fedorenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 179-184. — Бібліогр.: 27 назв. — англ.

The processes of laser-induced transformation of SiOₓ oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO₂ oxide matrix under irradiation by nanosecond pulses of YAG:Nd⁺³-laser were shown. Laser rad...