Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214940 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. |