Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214940
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ.

A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °C by using the direct current reactive magnetron sputtering method in a controlled Ar/O₂ atmosphere. Additional oxygen ion implantation in the deposited films allows the synthesis of vanadium oxide with crystalline inclusions of VO₂ and V₂O₅ phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOₓ (at x -> 2) film with the TCR close to 7.0%/°C.