Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214940 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862620915373703168 |
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| author | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| author_facet | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| citation_txt | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °C by using the direct current reactive magnetron sputtering method in a controlled Ar/O₂ atmosphere. Additional oxygen ion implantation in the deposited films allows the synthesis of vanadium oxide with crystalline inclusions of VO₂ and V₂O₅ phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOₓ (at x -> 2) film with the TCR close to 7.0%/°C.
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| first_indexed | 2026-03-21T12:40:43Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-214940 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:40:43Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. 2026-03-04T12:55:27Z 2017 Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 61.46.−w, 64.70.Nd, 82.80.Rt https://nasplib.isofts.kiev.ua/handle/123456789/214940 https://doi.org/10.15407/spqeo20.02.153 A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °C by using the direct current reactive magnetron sputtering method in a controlled Ar/O₂ atmosphere. Additional oxygen ion implantation in the deposited films allows the synthesis of vanadium oxide with crystalline inclusions of VO₂ and V₂O₅ phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOₓ (at x -> 2) film with the TCR close to 7.0%/°C. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient Article published earlier |
| spellingShingle | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| title | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_full | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_fullStr | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_full_unstemmed | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_short | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_sort | oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214940 |
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