Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Zitieren: | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. |
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| author | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| author_facet | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| citation_txt | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °C by using the direct current reactive magnetron sputtering method in a controlled Ar/O₂ atmosphere. Additional oxygen ion implantation in the deposited films allows the synthesis of vanadium oxide with crystalline inclusions of VO₂ and V₂O₅ phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOₓ (at x -> 2) film with the TCR close to 7.0%/°C.
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| first_indexed | 2026-03-21T12:40:43Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
153
PACS 61.46.−w, 64.70.Nd, 82.80.Rt
Oxygen ion-beam modification of vanadium oxide films for reaching
a high value of the resistance temperature coefficient
T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov,
O.Yo. Gudymenko, N.V. Safriuk
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine;
e-mail: romb@isp.kiev.ua
Abstract. A new method to prepare vanadium oxide with a high temperature coefficient
of resistance (TCR) and low resistance for uncooled micro-bolometers has been
proposed. Amorphous vanadium oxide films with V2O3 phase inclusions have been
fabricated on silicon and silica substrates at the temperature 200 °C by using the direct
current reactive magnetron sputtering method in controlled Ar/O2 atmosphere. Additional
oxygen ion implantation in the deposited films allows to synthesize vanadium oxide with
crystalline inclusions of VO2 and V2O5 phases under the low temperature annealing. The
following long low-temperature annealing provides formation of VOx (at x 2) film
with the TCR close to 7.0%/°C.
Keywords: resistance temperature coefficient, vanadium oxide films, reactive magnetron
sputtering, low-temperature annealing, oxygen implantation.
Manuscript received 25.01.17; revised version received 20.04.17; accepted for
publication 14.06.17; published online 18.07.17.
1. Introduction
The vanadium oxide films are promising material for
uncooled micro-bolometers with a low noise level.
These devices are commercially attractive for military
use as night vision, medical imaging, etc., [1]. Infrared
(IR) sensitivity of the VOx films (at x 2) is related
with the enormous changes in the electrical resistance
and optical absorption spectra caused by semiconductor-
to-metal phase transition (SMT). Since the vanadium
oxide exists in multiple phases, SMT temperatures are
different for each phase: V2O3 (~ –113 °C), VO2
(~68 °C), V2O5 (within the range 256 to 286 °C) [2-4].
For uncooled micro-bolometers it is important to obtain
a high TCR value near the room temperature. Only
vanadium dioxide has SMT in this temperature range.
So, availability of a sufficient amount of VO2 crystallites
in the VOx film is necessary for high IR sensitivity of
this type devices. Most of commercial micro-bolometers
are constructed on the base of polycrystalline VOx films
that contain a mixture of VO, V2O3, VO2, V2O5 and
other phases. It leads to the electric shunting or isolation
of VO2 crystallites. That restricts the TCR value and,
consequently, the device sensitivity, and leads to
increased noise [5].
The vanadium dioxide SMT is related with the
crystal structure geometric transformation from the
monoclinic to tetragonal syngony. These atomic
displacements lead to changes in the electronic structure
causing the valence and conduction band “overlapping”
[6]. SMT is accompanied by the occurrence of
significant elastic stresses. It leads to the destruction of
bulk crystals [7]. Therefore, most of practical vanadium
dioxide applications are related with thin nanostuctured
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
154
films (100…200 nm). They are not destroyed during the
thermal cycling and allow reducing the SMT
temperature. Thus, the TCR value depends on the
quantity, size and type of crystallites in the film.
Obviously, the grain interfaces also effect on the TCR
value. Numerous methods were used for preparation of
VOx films with majority of VO2 nanocrystallites for a
high TCR value. In most of the cases, grown and
annealed VOx films exhibit TCR values within the range
2…3%/K [3, 8]. Additional doping the VOx films with
tungsten enables to increase the TCR up to 4%/K [9].
Also, it was shown that the VOx film resistance is
reduced without changing of the TCR values after
hydrogen ion implantation with subsequent annealing at
300 °C [10]. DC magnetron sputtering is the most
commercially attractive method for preparing the VOx
film. In our previous work [11], the method of low
temperature deposition (250…300 °C) with the
following low temperature annealing (300 °C) was
proposed for high-ordered VO2 phase formation [12] and
VOx film synthesis with the high TCR value
(~7%/ K) [13].
To successfully implement this method, before the
annealing stage it is important to have an amorphous
VOx (1.8 < x < 2.2) film with rare inclusions of VO2 and
V2O3 crystallites. For obtaining the required functional
properties of the film, it can be used the low-temperature
annealing mode (depending on the x value), which
provides controlled growth of certain vanadium oxide
phases. Preparation of the VOx film with a certain x
value is a complex task, because this parameter is very
sensitive to the slightest changes in the deposition
conditions.
In this paper, we propose to adjust the component
composition of the deposited film by oxygen ion
implantation to form the film with a high TCR value
during annealing.
2. Experimental
Vanadium oxide films were deposited on the heated
(200 °C) silicon and silica substrates by using the DC
magnetron sputtering system. The gas discharge of
oxygen-argon mixture was used for sputtering the
99.95% purity vanadium target. The reactor chamber
was pumped out to the pressure 3·10–6 Torr before film
deposition. The distance between the target and substrate
was approximately 50 mm. The operation gas pressure
was maintained at 4·10–3 Torr with addition of 1%
oxygen. The resulting films had a dominant V2O3
structure with the thickness close to 300 nm. The
additional oxygen is required for V2O3 to VO2 structure
transformation of deposited films. For this purpose,
additional doping was carried out using ion implantation.
The deposited films were implanted with O2
+ ions during
the subsequent annealing at 320 °C for 30+180 min. The
ion implantation energy and doses were determined from
the SRIM software computation. In our case, 100 keV
energy and the three doses of 1·1017 (low), 2·1017
(medium) and 3·1017 (high) cm–2 were used. The
temperature dependences of the film specific electrical
resistance were measured to determine the TCR values.
The film thickness was measured by Dektak 3030 stylus
profiler. The film crystalline structure was examined by
scanning electron microscopy (SEM) and X-ray
diffraction. Glancing incidence angle (1°) X-ray
diffraction (GIXRD) was carried out using X’Pert PRO
MPD diffractometer with the CuKα wavelength (λ =
0.15418 nm). The grain size and surface morphology of
vanadium oxide films were investigated using SEM. The
film structure by the depth was studied using cross-
section SEM images after cutting the focused ion beam.
Depth distributions for different components (Si, V, VO,
V2O3, VO2 and V2O5) in the films were measured by
time-of-flight secondary ion mass spectroscopy (TOF-
SIMS 5) by using 0.6 keV Cs sputtering.
3. Results and discussion
SRIM calculation of depth profiles for the oxygen-
implanted VOx film (at x = 0.2 and density 4 g/cm3) are
shown in Fig. 1. It is seen that the dose increase leads to
compaction of the buried layer. The oxygen
concentration is increased near the distribution
maximum. The layer extends from 100 nm (low dose) to
130 nm (medium dose) and to 150 nm (high dose) at
1·1022 cm–3 oxygen concentration level. The oxygen
concentrations in the formed VOx layer were 30, 50 and
65 at.%, respectively.
The TCR values were determined from the
temperature dependence of specific electrical resistance
by the formula:
T
R
Rref
1
TCR ,
where R is the specific electrical resistance of the thin
film at the temperature T.
0 50 100 150 200 250 300 350
1021
1022
1023
O
xy
ge
n
co
nc
en
tr
at
io
n,
c
m
-3
Depth, nm
3e17 ion/cm2
2e17 ion/cm2
1e17 ion/cm2
100 keV, O
2
+ implantation
Fig. 1. SRIM calculation of oxygen depth profiles in V2O3
film.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
155
Low-dose oxygen implantation of VOx films does
not allow to obtain acceptable TCR values for any
thermal annealing. Obviously, it is caused by a too low
concentration of oxygen for generation of a sufficient
amount of VO2 or V2O5 crystallites. The temperature
dependences of the film specific electrical resistance are
shown for the medium (Fig. 2a) and high (Fig. 2b)
oxygen doses after 30 min temperature annealing. It is
seen that these dependences have a typical descending
form. The electrical resistance is changed by 2 to 3 times
under sample heating/cooling within the temperature
range 25…60 °C. It indicates the appearance of a large
number of VO2 and V2O5 phase inclusions in the initially
metallic VOx film. The calculated TCR values within the
temperature range 25…50 °C are 1.85 and 2.05 for
medium and high oxygen doses, respectively. The
additional three-hour thermal annealing leads to a more
abrupt change in the electrical resistance for the film
implanted with the medium oxygen dose (Fig. 2c). It is
seen that SMT is observed at a lower temperature.
At the same time, a film implanted with a high
oxygen dose does not show any significant change in the
temperature dependence of the specific electrical
resistance under heating (Fig. 2d). However, the shape
of investigated dependence becomes a more linear upon
cooling the film.
The calculated TCR shows a strong increase of its
value for the medium dose and a slight decrease for a
high dose of implanted oxygen. The calculated TCR
values are given in Table for several temperature ranges.
30 40 50 60 70 80
2x10-1
4x10-1
6x10-1
8x10-1
S
pe
ci
fic
R
es
is
ta
nc
e,
O
hm
*c
m
T, C
heating
cooling
D2= 2x1017 cm-2
Annealing 30 min.
30 40 50 60 70 80
5.0x10-3
1.0x10-2
1.5x10-2
2.0x10-2 D3= 3x1017 cm-2
Annealing 30 min.
S
pe
ci
fic
R
es
is
ta
nc
e,
O
hm
*c
m
T, C
heating
cooling
a b
30 40 50 60 70 80
0
5x10-3
1x10-2
2x10-2
D2= 2x1017 cm-2
Annealing 30 +180 min.
S
pe
ci
fic
R
es
is
ta
nc
e,
O
hm
*c
m
T, C
heating
cooling
30 40 50 60 70 80
5x10-3
1x10-2
2x10-2
2x10-2 D2= 3x1017 cm-2
Annealing 30+180 min.
S
pe
ci
fic
R
es
is
ta
nc
e,
O
h
m
*c
m
T, C
heating
cooling
c d
Fig. 2. Temperature dependence of the specific resistance for VOx films after annealing that follows oxygen implantation with a
medium (a, c) and high doses (b, d).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
156
Table. Calculated TCR values for some temperature ranges.
Temperature range, °C
25–35 35–45 25–45 30–40 40–50 25–50Dose, cm–2 Annealing
time, min
TCR value
2·1017 30 1.57 2.44 1.82 2.09 2.49 1.85
3·1017 30 2.55 2.51 2.21 2.42 2.56 2.06
2·1017 30+180 1.51 6.27 3.42 2.77 7.83 3.40
3·1017 30+180 1.40 2.10 1.60 1.55 2.35 1.62
It is seen that the additional annealing for the
medium oxygen dose implanted film leads to increase in
the average TCR value up to 3.4% in the 25…50 °C
temperature range. The TCR value exceeds 6% at the
temperatures above 35 °C.
XRD spectra of implanted with the medium and
high oxygen doses VOx films are shown in Fig. 3a and
Fig. 3b, respectively. In addition, shown there are the
images of fingerprint reflexes of V2O3, VO2 and V2O5
phases. It is seen that all the spectra have the Gauss
distribution of intensity in the angle range 2θ =20…40°.
It corresponds to amorphous phase of VOx films. Also,
all the spectra contain characteristic reflections of V2O3
metallic phase. The main 012 reflex is observed at the
angle 24.3° against the background of amorphous
Gaussian distribution for the medium oxygen dose.
Reflexes 024, 104, 006 and 116 are registered in the
spectrum distinctly. The 30-min film annealing leads to
the some peak attenuation of these reflexes in the
spectrum. At the same time, we observe some reflexes
indicating VO2 phase formation. The reflex 200 at the
angle 37° is the most clearly pronounced. Also,
presented in the spectrum are reflexes 212 and 211 at the
angles 42° and 55.2°, respectively. The weak 011 reflex
at the angle 27.7° is observed against the background of
Gaussian scattering from the amorphous phase. The
appearance of peaks corresponding to weak reflexes
(111 and 411) from the V2O5 phase is also observed. The
main 110 reflex peak inherent to the V2O5 phase is not
observed, which is caused by the strong X-ray scattering
from the amorphous phase. Additional annealing for
180 min leads to an increase of the reflexes intensity
from the VO2 phase as well as attenuation of reflexes
from the V2O3 and V2O5 phases.
V2O3 phase reflexes have lower peak intensities for
the film implanted with a high dose of oxygen. The 30-
min film annealing leads to some peak attenuation and
extension of these reflexes in the spectrum. Obviously, it
is related with the appearance of compressive and tensile
stresses or with a dilution of V2O3 crystallites during
oxygen redistribution. Additional annealing for 180 min
leads to 024 reflex appearance and narrowing the peaks
of all reflexes.
This may be caused by coarsening or/and
coalescence of smaller crystallites. The reflexes of VO2
or V2O5 phases are not found in the XRD spectrum after
annealing. The average crystallite sizes with V2O3 and
VO2 phases were estimated for both films by using the
XRD spectra. The 116 reflex from V2O3 phase is most
clearly appeared in all the spectra, so this reflex was
used for calculation of grain sizes for all the samples
Fig. 4a. As we can see from Fig. 4, the grain sizes are
reduced after annealing in both films. But grains are
larger in the case of lower implantation dose. At the
same time, the grain size of the additional VO2 phase
increases after annealing Fig. 4b.
20 30 40 50 60
100
1000
V2O5
In
te
n
si
ty
, a
rb
. u
n
it
s
2 deg
O
2
+ implantation
30 min. annealing
30 + 180 min. annealing
Low dose of implantation
116024006
104012
V2O3
VO2
200 211011 -212
111110
311 411 312
20 30 40 50 60
100
1000
In
te
n
s
it
y
,
ar
b
.
u
n
it
s
2deg
O
2
+ implantation
30 min. annealing
30+180 min. annealing
High dose of implantation
V2O5
116024006
104012
V2O3
VO2
200 211011 -212
111110 311 411 312
a b
Fig. 3. XRD spectra of oxygen-implanted VOx films with the medium (a) and high (b) doses after implantation; 30 min annealing
and 30+180 min annealing.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
157
12
16
20
24
28
32
G
ra
in
s
iz
e,
n
m
Medium Oxygen Dose
High Oxygen Dose
1
2
3
O2
+ implant.
Annealing
Additional annealing
5
10
15
20
25
30
G
ra
in
s
iz
e,
n
m
Medium Oxygen Dose
2
3
1
Annealing
O2
+ implant.
Additional annealing
a b
Fig. 4. Grain size of V2O3 phase calculated from 116 reflex (a) and of VO2 phase from 200 reflex (b) after: oxygen implantation
(1), 30 min annealing (2), 30+180 min annealing (3).
The depth distribution of vanadium oxide phases
was investigated using the SIMS method. The VOx film
implanted with the medium oxygen dose was used for
analysis after thermal annealing for 30+180 min, be-
cause this film has the highest TCR value. The depth
dependences of the V, VO, V2O3, VO2 and V2O5 cluster
signals are shown in Fig. 5.
It is seen that, in the 100 nm region, there is a sharp
increase in the signals of VO2 and V2O5 cluster ions,
while the signals of V and VO cluster ions are reduced.
A slight increase in the V2O3 signal is also observed. It is
obvious that oxygen implantation leads to formation of
numerous VO2 and V2O5 nuclei in the surface layer. The
content of metal vanadium and vanadium monoxide
phases significantly reduces.
SEM images show (Fig. 6) that the film annealing
leads to formation of the surface microcrystalline struc-
ture. At the medium dose (Fig. 6a) of oxygen implan-
tation the film has better crystallinity and larger crystal
sizes than those in the high dose implantation case
(Fig. 6b). These data are in good agreement with the X-
ray data and confirm the thesis that the supersaturating
by oxygen slows down the crystallization of films. Thus,
we have demonstrated that the low-temperature method
to form vanadium oxide crystalline films [11, 12] can be
used for ion-implanted films.
0 500 1000 1500 2000
102
10
3
In
te
ns
ity
(
cp
s)
Sputter Time (s)
Si
V
VO
V2O3
V2O5
VO2
0 50 100 150 200 250 300 350
Depth, nm
Fig. 5. TOF-SIMS depth profiles of Si, V, VO, V2O3, VO2,
V2O5 after implantation and annealing of the SiOx film.
Fig. 6. SEM surface images of the film implanted with the medium (a) and high (b) doses after 30+180 min annealing.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 2. P. 153-158.
doi: https://doi.org/10.15407/spqeo20.02.153
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
158
As it was shown in [13], only amorphous films
with rare nanocrystalline inclusions are the most suitable
object for controlled crystallization and modification of
crystals under the subsequent low-temperature
annealing. Since the doses that we applied lead to
complete amorphization of surface layer, therein should
not be crystallites that could be nuclei for crystallization
during annealing. Most likely that crystallization nuclei
(V2O3 crystallites) are located deeper (>100 nm from the
surface level) than the layer of ion penetration.
4. Conclusion
It has been shown that the low-temperature (200 °C) of
vanadium oxide films deposition results in the VOx
amorphous film formation with a high content of V2O3
phase. Additional oxygen implantation creates an
oxygen supersaturated region in the VOx film with a
smaller size of V2O3 crystallites. Obviously, the
subsequent low-temperature annealing leads to the shift
of the film thermodynamic equilibrium state in direction
to the formation of VO2 and V2O5 crystallization centers.
Prolonged low-temperature annealing leads to the
growth of semiconductor crystals. Expectly these
semiconductor phases can be responsible for this
behavior of TCR described above. An excess of oxygen
content above the critical level leads to the higher
amorphization level and dissolution of the crystallization
centers. In this case, an amorphous state of film with a
smaller size of V2O3 crystallites is more thermally stable.
Thus, the used method enables to calculate and to inject
the missed amount of oxygen in a film by ion
implantation for obtaining the high TCR value.
References
1. Fieldhouse N., Pursel S.M., Carey R., Horn M.W.,
and Bharadwaja S.S.N. Vanadium oxide thin films
for bolometric applications deposited by reactive
pulsed dc sputtering. J. Vac. Sci. Technol. A. 2009.
27, No. 4. P. 951–955.
2. Morin F.J. et al. Oxides which show a metal-to-
insulator transition at the Neel temperature. Phys.
Rev. Lett. 1959. 3. P. 34.
3. Chen S.H., Ma H., Dai J., and Yi X.J.
Nanostructured vanadium dioxide thin films with
low phase transition temperature. Appl. Phys. Lett.
2007. 90, No. 10. P. 101117.
4. Nadkarni G.S., Shirodkar V.S. Experiment and
theory for switching in Al/V2O5/Al devices. Thin
Solid Films. 1983. 105. P. 115−129.
5. Zerov V.Yu., Kulikov Yu.V., Malyarov V.G. et al.
Vanadium oxide films with improved
characteristics for IR microbolometric matrices.
Techn. Phys. Lett. 2001. 27, No. 5. P. 378–380.
6. Booth J.M., Drumm D.W., Casey P.S. et al.,
Correlating the energetics and atomic motions of
the metal-insulator transition of M1 vanadium
dioxide. Sci. Repts. 2016. 6. P. 26391.
7. Viswanath B., Ko C., Ramanathan S. Size effects
on stress relaxation across the metal insulator
transition in VO2 thin films. J. Mater. Res. 2011.
26. P. 1384.
8. Venkatasubramanian C., Cabarcos O.M., Allara
D.L., Horn M.W., and Ashok S. Correlation of
temperature response and structure of annealed
VOx thin films for IR detector applications. J. Vac.
Sci. Technol. A. 2009. 27, No. 4. P. 956–961.
9. Han Y.H., Kim K.T., Ahn N.C., Shin H.J. et al.
Fabrication and characterization of bolometeric
oxide thin films based on vanadium tungsten alloy.
Sens. Actuator A-Phys. 2005. 123-124. P. 660–664.
10. Venkatasubramanian C., Horn M.W., and Ashok S.
Ion implantation studies on VOx films prepared by
pulsed dc reactive sputtering. Nucl. Instrum. Meth.
Phys. Res. B. 2009. 267, No. 8-9. P. 1476–1479.
11. Melnik V., Khatsevych I., Goltvyanskyj Yu.,
Nikirin V., Romanyuk B., Popov V., Kladko V.,
Kuchuk A. Thermochromic properties of vanadium
dioxide films obtained by magnetron sputtering.
Ukr. J. Phys. 2011. 56. P. 534-540.
12. Melnik V., Khatsevych I., Kladko V., Kuchuk A.,
Nikirin V., Romanyuk B. Low-temperature method
for thermochromic high ordered VO2 phase
formation. Mater. Lett. 2012. 68. P. 215–217.
13. Goltvyanskyi Yu., Khatsevych I., Kuchuk A.,
Kladko V., Melnik V., Lytvyn P., Nikirin V.,
Romanyuk B. Structural transformation and
functional properties of vanadium oxide films after
low-temperature annealing. Thin Solid Films. 2014.
564. P. 179–185.
|
| id | nasplib_isofts_kiev_ua-123456789-214940 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T12:40:43Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. 2026-03-04T12:55:27Z 2017 Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient / T.M. Sabov, O.S. Oberemok, O.V. Dubikovskyi, V.P. Melnik, V.P. Kladko, B.M. Romanyuk, V.G. Popov, O.Yo. Gudymenko, N.V. Safriuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 2. — С. 153-158. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 61.46.−w, 64.70.Nd, 82.80.Rt https://nasplib.isofts.kiev.ua/handle/123456789/214940 https://doi.org/10.15407/spqeo20.02.153 A new method to prepare vanadium oxide with a high temperature coefficient of resistance (TCR) and low resistance for uncooled micro-bolometers has been proposed. Amorphous vanadium oxide films with V₂O₃ phase inclusions have been fabricated on silicon and silica substrates at a temperature of 200 °C by using the direct current reactive magnetron sputtering method in a controlled Ar/O₂ atmosphere. Additional oxygen ion implantation in the deposited films allows the synthesis of vanadium oxide with crystalline inclusions of VO₂ and V₂O₅ phases under the low temperature annealing. The following long low-temperature annealing provides formation of VOₓ (at x -> 2) film with the TCR close to 7.0%/°C. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient Article published earlier |
| spellingShingle | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient Sabov, T.M. Oberemok, O.S. Dubikovskyi, O.V. Melnik, V.P. Kladko, V.P. Romanyuk, B.M. Popov, V.G. Gudymenko, O.Yo. Safriuk, N.V. |
| title | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_full | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_fullStr | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_full_unstemmed | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_short | Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| title_sort | oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214940 |
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