Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Parfenyuk, P.V., Evtukh, A.A., Korobchuk, I.M., Glotov, V.I., Strelchuk, V.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214950
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface / P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 330-334. — Бібліогр.: 19 назв. — англ.

The influence of porous alumina template morphology on silicon film growth during deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In the case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed during deposition. After two-stage anodization, the porous alumina has a tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics, and ionics devices.