Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
The influence of porous alumina template morphology on silicon film growth during deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In the case of porou...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2017 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/214950 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface / P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 330-334. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862724172642254848 |
|---|---|
| author | Parfenyuk, P.V. Evtukh, A.A. Korobchuk, I.M. Glotov, V.I. Strelchuk, V.V. |
| author_facet | Parfenyuk, P.V. Evtukh, A.A. Korobchuk, I.M. Glotov, V.I. Strelchuk, V.V. |
| citation_txt | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface / P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 330-334. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of porous alumina template morphology on silicon film growth during deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In the case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed during deposition. After two-stage anodization, the porous alumina has a tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics, and ionics devices.
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| first_indexed | 2026-03-21T06:43:58Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214950 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T06:43:58Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Parfenyuk, P.V. Evtukh, A.A. Korobchuk, I.M. Glotov, V.I. Strelchuk, V.V. 2026-03-05T12:04:14Z 2017 Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface / P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 330-334. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 78.30.Ly, 78.55.Mb, 81.05.Gh, 81.70.Fy https://nasplib.isofts.kiev.ua/handle/123456789/214950 https://doi.org/10.15407/spqeo20.03.330 The influence of porous alumina template morphology on silicon film growth during deposition by PE CVD has been investigated. As it was shown, the structural properties of silicon phases depend on the pore geometry and surface morphology of the anodized porous alumina substrate. In the case of porous alumina formation in one stage, ripple-like morphology takes place. The growth of a-Si:H film is observed during deposition. After two-stage anodization, the porous alumina has a tipped/ribbed morphology. In this case, usually a-Si:H film grows on the bottom of the pores, and nc-Si:H/a-Si:H one grows on the tips. In the case of deep pores, the nanocrystalline nc-Si:H film grows only above the top of the pores. The obtained results could be used when developing new types of photocells, sensors, nanophotonics, and ionics devices. This work was partially funded by the State Fund for Fundamental Research of Ukraine, grant F64/6-2016. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface Article published earlier |
| spellingShingle | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface Parfenyuk, P.V. Evtukh, A.A. Korobchuk, I.M. Glotov, V.I. Strelchuk, V.V. |
| title | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| title_full | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| title_fullStr | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| title_full_unstemmed | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| title_short | Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| title_sort | peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214950 |
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