Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Onyshchenko, V.F., Karachevtseva, L.A., Lytvynenko, O.O., Plakhotnyuk, M.M., Stronska, O.Y.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214951
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids / V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 325-329. — Бібліогр.: 18 назв. — англ.

We calculated the dependence of the effective minority-carrier lifetime in black-silicon nano-textured with cones and pyramids on the diameter of the cone base, the side of the pyramid base, and the height of the cone and pyramid. The numerical calculation shows that the n-type polished plate of sin...