Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
We calculated the dependence of the effective minority-carrier lifetime in black-silicon nano-textured with cones and pyramids on the diameter of the cone base, the side of the pyramid base, and the height of the cone and pyramid. The numerical calculation shows that the n-type polished plate of sin...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2017 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/214951 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids / V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 325-329. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862633414164742144 |
|---|---|
| author | Onyshchenko, V.F. Karachevtseva, L.A. Lytvynenko, O.O. Plakhotnyuk, M.M. Stronska, O.Y. |
| author_facet | Onyshchenko, V.F. Karachevtseva, L.A. Lytvynenko, O.O. Plakhotnyuk, M.M. Stronska, O.Y. |
| citation_txt | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids / V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 325-329. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We calculated the dependence of the effective minority-carrier lifetime in black-silicon nano-textured with cones and pyramids on the diameter of the cone base, the side of the pyramid base, and the height of the cone and pyramid. The numerical calculation shows that the n-type polished plate of single-crystal silicon and the n-type plate of black silicon have a high minority-carrier lifetime in both the bulk and on the silicon surface, indicating high purity of both the bulk and the surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one.
|
| first_indexed | 2026-03-21T13:45:42Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-214951 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T13:45:42Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Onyshchenko, V.F. Karachevtseva, L.A. Lytvynenko, O.O. Plakhotnyuk, M.M. Stronska, O.Y. 2026-03-05T12:04:31Z 2017 Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids / V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 325-329. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 72.80.Cw https://nasplib.isofts.kiev.ua/handle/123456789/214951 https://doi.org/10.15407/spqeo20.03.325 We calculated the dependence of the effective minority-carrier lifetime in black-silicon nano-textured with cones and pyramids on the diameter of the cone base, the side of the pyramid base, and the height of the cone and pyramid. The numerical calculation shows that the n-type polished plate of single-crystal silicon and the n-type plate of black silicon have a high minority-carrier lifetime in both the bulk and on the silicon surface, indicating high purity of both the bulk and the surface. However, the measured experimentally effective lifetime of minority carriers in the n-type black silicon is 1.55 ms and is determined by the surface lifetime. The measured effective lifetime of minority charge carriers in the p-type polished silicon is 1.24 ms. The minority carrier lifetime in the bulk of the polished p-type silicon is lower than the surface one. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids Article published earlier |
| spellingShingle | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids Onyshchenko, V.F. Karachevtseva, L.A. Lytvynenko, O.O. Plakhotnyuk, M.M. Stronska, O.Y. |
| title | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_full | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_fullStr | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_full_unstemmed | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_short | Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| title_sort | effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214951 |
| work_keys_str_mv | AT onyshchenkovf effectivelifetimeofminoritycarriersinblacksiliconnanotexturedbyconesandpyramids AT karachevtsevala effectivelifetimeofminoritycarriersinblacksiliconnanotexturedbyconesandpyramids AT lytvynenkooo effectivelifetimeofminoritycarriersinblacksiliconnanotexturedbyconesandpyramids AT plakhotnyukmm effectivelifetimeofminoritycarriersinblacksiliconnanotexturedbyconesandpyramids AT stronskaoy effectivelifetimeofminoritycarriersinblacksiliconnanotexturedbyconesandpyramids |