On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shall...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2017 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214954 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ. |