On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2017
• Main Authors: Glinchuk, K.D., Maslov, V.P., Strilchuk, O.M., Lyapina, A.B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/214954
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ.

The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shallow donor bound electrons with free holes on Cd₁₋ₓZnₓTe composition x (x ≤ 0.28) are analyzed in detail. It is shown that the 4.2 K peak position of the A⁰X induced emission band used for the exact x determination could be related to some problems arising from the variety of the 4.2 K hνm(A⁰X) vs. x dependences. As a result of the pointed problem, analysis of the 4.2 K hνm(A⁰X) vs. x dependences permits us to find the x value with some inaccuracy (some unknown factors shift the energy position of the A⁰X bound exciton are responsible for this fact). The noticeable (differing from the expected theoretical ones) differences of the peak positions of emission bands hνm induced by radiative annihilation of D⁰X bound excitons at 295 K, radiative recombination of donor bound electrons D⁰ with free holes h at 300 K and radiative annihilation of free electrons e and holes at 300 K, i.e. of 295 K hνm(D⁰X), 300 K hνm(D⁰h) and 300 K hνm(eh) values, accordingly, vs. x dependences are observed and briefly analyzed.