On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shall...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2017
Main Authors: Glinchuk, K.D., Maslov, V.P., Strilchuk, O.M., Lyapina, A.B.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/214954
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Cite this:On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Glinchuk, K.D.
Maslov, V.P.
Strilchuk, O.M.
Lyapina, A.B.
author_facet Glinchuk, K.D.
Maslov, V.P.
Strilchuk, O.M.
Lyapina, A.B.
citation_txt On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shallow donor bound electrons with free holes on Cd₁₋ₓZnₓTe composition x (x ≤ 0.28) are analyzed in detail. It is shown that the 4.2 K peak position of the A⁰X induced emission band used for the exact x determination could be related to some problems arising from the variety of the 4.2 K hνm(A⁰X) vs. x dependences. As a result of the pointed problem, analysis of the 4.2 K hνm(A⁰X) vs. x dependences permits us to find the x value with some inaccuracy (some unknown factors shift the energy position of the A⁰X bound exciton are responsible for this fact). The noticeable (differing from the expected theoretical ones) differences of the peak positions of emission bands hνm induced by radiative annihilation of D⁰X bound excitons at 295 K, radiative recombination of donor bound electrons D⁰ with free holes h at 300 K and radiative annihilation of free electrons e and holes at 300 K, i.e. of 295 K hνm(D⁰X), 300 K hνm(D⁰h) and 300 K hνm(eh) values, accordingly, vs. x dependences are observed and briefly analyzed.
first_indexed 2026-03-21T11:51:02Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
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language English
last_indexed 2026-03-21T11:51:02Z
publishDate 2017
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Glinchuk, K.D.
Maslov, V.P.
Strilchuk, O.M.
Lyapina, A.B.
2026-03-05T12:05:19Z
2017
On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ.
1560-8034
PACS: 78.55.Et, 78.55.-m
https://nasplib.isofts.kiev.ua/handle/123456789/214954
https://doi.org/10.15407/spqeo20.03.305
The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shallow donor bound electrons with free holes on Cd₁₋ₓZnₓTe composition x (x ≤ 0.28) are analyzed in detail. It is shown that the 4.2 K peak position of the A⁰X induced emission band used for the exact x determination could be related to some problems arising from the variety of the 4.2 K hνm(A⁰X) vs. x dependences. As a result of the pointed problem, analysis of the 4.2 K hνm(A⁰X) vs. x dependences permits us to find the x value with some inaccuracy (some unknown factors shift the energy position of the A⁰X bound exciton are responsible for this fact). The noticeable (differing from the expected theoretical ones) differences of the peak positions of emission bands hνm induced by radiative annihilation of D⁰X bound excitons at 295 K, radiative recombination of donor bound electrons D⁰ with free holes h at 300 K and radiative annihilation of free electrons e and holes at 300 K, i.e. of 295 K hνm(D⁰X), 300 K hνm(D⁰h) and 300 K hνm(eh) values, accordingly, vs. x dependences are observed and briefly analyzed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
Article
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spellingShingle On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
Glinchuk, K.D.
Maslov, V.P.
Strilchuk, O.M.
Lyapina, A.B.
title On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
title_full On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
title_fullStr On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
title_full_unstemmed On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
title_short On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
title_sort on determination of cd₁₋ₓznₓte composition from an analysis of the 4.2, 77 and 295 k edge photoluminescence spectra
url https://nasplib.isofts.kiev.ua/handle/123456789/214954
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