On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Glinchuk, K.D., Maslov, V.P., Strilchuk, O.M., Lyapina, A.B.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214954
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: On determination of Cd₁₋ₓZnₓTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra / K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 3. — С. 305-313. — Бібліогр.: 24 назв. — англ.

The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hνm of the Cd₁₋ₓZnₓTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A⁰ or shallow neutral donors D⁰ excitons A⁰X and D⁰X and (b) recombination of free and shall...