Trap-assisted conductivity in anodic oxide on InSb
The direct current conductivity of the anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling, and Poole–Frenkel conduction processes. Two defect states were found in the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2017 |
| ISSN: | 1560-8034 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/214992 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Trap-assisted conductivity in anodic oxide on InSb / G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 470-474. — Бібліогр.: 28 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The direct current conductivity of the anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling, and Poole–Frenkel conduction processes. Two defect states were found in the energy gap of the anodic oxide, which can be attributed to bulk traps. The asymmetry in the current-voltage characteristics is analyzed in terms of the comparative distribution of the applied bias voltage between the anodic oxide and the depletion region in InSb.
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| ISSN: | 1560-8034 |