Trap-assisted conductivity in anodic oxide on InSb
The direct current conductivity of the anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling, and Poole–Frenkel conduction processes. Two defect states were found in the...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Цитувати: | Trap-assisted conductivity in anodic oxide on InSb / G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 470-474. — Бібліогр.: 28 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1860283240540012544 |
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| author | Beketov, G.V. Sukach, A.V. Tetyorkin, V.V. Trotsenko, S.P. |
| author_facet | Beketov, G.V. Sukach, A.V. Tetyorkin, V.V. Trotsenko, S.P. |
| citation_txt | Trap-assisted conductivity in anodic oxide on InSb / G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 470-474. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The direct current conductivity of the anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling, and Poole–Frenkel conduction processes. Two defect states were found in the energy gap of the anodic oxide, which can be attributed to bulk traps. The asymmetry in the current-voltage characteristics is analyzed in terms of the comparative distribution of the applied bias voltage between the anodic oxide and the depletion region in InSb.
|
| first_indexed | 2026-03-21T14:45:47Z |
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 4. P. 470-474.
doi: https://doi.org/10.15407/spqeo20.04.470
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
470
PACS 73.20.-r, 73.40.Qv
Trap-assisted conductivity in anodic oxide on InSb
G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
E-mail: teterkin@isp.kiev.ua
Abstract. The direct current conductivity of anodic oxide of InSb has been investigated
as a function of applied bias and temperature. Proposed in this work is a model of
conductivity that includes ohmic, trap-assisted tunneling and Poole–Frenkel conduction
processes. Two defect states were found in the energy gap of the anodic oxide, which can
be attributed to bulk traps. The asymmetry in the current-voltage characteristics is
analyzed in terms of comparative distribution of the applied bias voltage between the
anodic oxide and the depletion region in InSb.
Keywords: InSb, anodic oxide, traps, conductivity.
Manuscript received 05.10.17; revised version received 08.11.17; accepted for
publication 07.12.17; published online 07.12.17.
1. Introduction
Narrow-gap InSb is one of the key semiconductor
materials that is widely used to manufacture modern
infrared detectors [1]. Since InSb is characterized by
relatively low melting point, deviation from
stoichiometry at the surface as a result of evaporation or
segregation of volatile component (Sb) can occur at
rather low temperatures. Therefore the surface
passivation and protection is recognized to be an
important step in technology of InSb infrared detectors.
The passivation layer deposited on the surface of
infrared photodiodes should provide high resistance, low
interface state density and low fixed charge density as
well as satisfy requirements for both n-type and p-type
conductivity surface simultaneously. As was first shown
by Dewald [2], anodic oxides, grown by the electrolyte
technique, can be used as effective passivation layers for
InSb photodiodes. Since that, numerous studies of InSb
anodic oxides have been published in the literature (see,
e.g., [2-10] and citations therein). It was shown that the
most important feature of InSb anodization is the
composition inhomogeneity of anodic oxides, which
strongly depends on the growth conditions. Analysis of
published data indicates that physical properties of
anodic oxides on InSb are dependent on a number of
factors such as quality and crystallographic orientation
of initial wafers, surface treatment before anodization,
parameters of anodization process, thermal treatment of
oxides after anodization, etc. Because of anodic oxides
on InSb have poor chemical and mechanical stability,
the passivation stacks comprised the anodic oxide and
extrinsic dielectric are usually used. For this purpose,
thin layers of SiOx and Si3N4 were deposited on the
anodic oxide by different low-temperature physical and
chemical vapor deposition techniques [6-8]. The density
of interface states in the range 1011…1012 cm–2·eV–1 was
shown to be typical for the anodic oxide on InSb. Lower
densities were obtained when the thermally grown native
oxide on the substrate surface was preserved before
anodization [6, 9]. The anodic sulfidization process also
provides rather low density interface states of the order
of 3·1010 cm–2·eV–1 [10].
The commonly used approach for investigation of
the anodic oxide on InSb is based on preparation of
MIS-type capacitors. This allows one to use well
developed experimental techniques for characterization
of anodic oxides themselves as well as their interface
with a semiconductor [11]. The direct current conduc-
tivity in MIS capacitors of InSb was studied in a number
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 4. P. 470-474.
doi: https://doi.org/10.15407/spqeo20.04.470
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
471
of works [12-16]. Because of contradictory data were
obtained, studies of electrical conductivity remain
important in order to clarify the role of native defects in
the anodic oxide. The aim of this work was to study
conductivity mechanisms and aging effects in MIS
capacitors of InSb.
2. Samples and experimental methods
The MIS capacitors were prepared on n-InSb(100)
substrates with electron concentration in the range
(1…2)·1014 cm–3 at the temperature 77 K. Before anodi-
zation, all substrates were mechanically and chemo-
mechanically polished on a soft pad wetted with 0.5%
Br2 in methanol. Finally, they were immersed into Br2 in
methanol solution for several minutes. In this way, a
shiny mirror-like surface was obtained. The anodic oxide
was grown using an electrolyte of 0.1N·KOH in a
mixture of 90% ethylene glycol and 10% H2O. The
anodization process was carried out in two steps. At the
first step, the oxide was grown in a galvanostatic mode
at a current density 0.1 mA/cm2 until the voltage of 28 V
on the electrochemical cell was reached. At the second
stage, potentiostatic anodization was continued at 28 V
until anodic current drops down to ~10 µA/cm2. As
measured by ellipsometry, the thickness of the grown
oxide was about 450 nm. Indium electrodes with a
diameter of 0.75 mm were deposited on the oxide
surface by vacuum evaporation.
In order to investigate aging effects, the capacitors
were thermocycled between 77 K and room temperature
for several (typically 5-7) complete cycles. Each
thermocycle included fast cooling down to 77 K and
slow warming to room temperature. The conductivity
was investigated by measuring the direct current flowing
through the anodic oxide as a function of the applied
bias and temperature within the range 77…300 K.
3. Results and discussion
Three groups of MIS capacitors were investigated:
initial, subjected to thermal cycling and storaged after
cycling for one-month period. The current-voltage
characteristics of representative capacitors from each
group are shown in Fig. 1. The voltage is assumed to be
positive, when the indium electrode on the anodic oxide
is positively biased with respect to InSb substrate. The
following features of the measured characteristics should
be pointed out. The thermal cycling results in increase of
the anodic oxide conductivity, that is decreased to the
initial state after one-month storage in the laboratory
conditions. The measured current is polarity dependent
(Fig. 1). At low biases, the current-voltage charac-
teristics exhibit ohmic behavior, whereas at higher biases
the nonlinear behavior is observed. Note that the maxi-
mum values of the forward current in Fig. 1 correspond
to the breakdown voltages 7, 8 and 3 V for the initial
capacitor, after storage and thermal cycling,
respectively.
10-2 10-1 100 101
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
5
3
2
1
I,
A
U, V
Fig. 1. Reverse (open dots) and forward (close dots) current-
voltage characteristics in initial (1), subjected to thermal
cycling (2) and stored for one month (3) InSb MIS capacitors.
The temperature dependences of the leakage
current, measured at fixed values of forward and reverse
biases, are shown in Fig. 2. As can be seen, there are two
temperature intervals where activation dependences of
the current on temperature are observed. The activation
energies determined from their slope were E1 = 0.08 eV
and E2 = 0.21 eV at low forward and reverse bias
voltages, which correspond to the linear I vs U
dependences in Fig. 1. These energies decrease to 0.06
and 0.16 eV at the bias voltage 3.0 V, which corresponds
to the nonlinear I vs U dependences. After thermal
cycling, the corresponding energies were 0.05 and
0.17 eV as well as 0.04 and 0.14 eV at low and high
biases, accordingly. The observed activation
conductivity can be attributed to thermal ionization of
traps in the anodic oxide (hereafter shallow and deep
traps). Note that presence of two sets of traps in the
anodic oxide of InSb was previously reported in the
literature [5].
As a rule, the polarity dependent current-voltage
characteristics of MIS capacitors is interpreted by
Schottky emission [11]. This conductivity mechanism
was analyzed in details in InSb MIS capacitors [13, 14].
To fit the experimental current-voltage characteristics at
room temperature the Schottky current density was
calculated using the formula
( )
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−Φ−=
∞
∗∗
0
0
2
S 4
exp
επε
eF
kT
emmTAJ B (1)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 4. P. 470-474.
doi: https://doi.org/10.15407/spqeo20.04.470
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
472
5 6 7 8 9 10 11 12 13 14
10-7
10-6
10-5
10-4
10-3
2
1
0.1 V
-0.1 V
3.0 V
-3.0 V
I,
A
1000/T, K-1
Fig. 2. Temperature dependences of dark current measured
before (1) and after (2) thermal cycling. The legend shows the
bias voltages in volts.
for the effective mass of electrons in the anodic oxide
m* = 0.01m0 and the potential barrier height at the
interface ΦB close to 1.0 eV [13]. It should be pointed
out that the fitting of calculated data was obtained only
at room temperature by using the rather low value of the
electron effective mass. In this study, the electron
effective mass was estimated in the following way.
Because of the anodic oxide is composed of In2O3 and
Sb2O3, both constituents can contribute to the effective
mass. Due to In2O3 to Sb2O3 ratio depends on the
preparation conditions and remains unknown in the
particular sample, the following simplification was
made. It was taken into account that In2O3 constituent
prevails in the anodic oxide [6]. Further, it is generally
believed that the oxide is amorphous in its nature.
However, presence of nanocrystallites in the amorphous
phase and formation of microcrystalline structure were
observed as well [5, 16]. So, the values of electron
effective mass m* = 0.2…0.3m0, which was reported in
the literature for polycrystalline films and single crystals
[18-20], were assumed to be suitable for amorphous
In2O3. These values are typical for electrons in absence
of degeneracy. At room temperature, the critical carrier
concentration for the onset of degeneracy in In2O3 is
approximately equal to 2·1018 cm–3 [21]. A similar value
of 5.5·1018 cm–3 was also obtained in [20]. In the
presence of degeneracy, the electron effective mass in
In2O3 strongly depends on the electron concentration due
to conduction band nonparabolicity.
The results of Schottky emission current
calculation (not shown in Fig.1) are restricted to the
following reasons. At the temperature 77 K, the
calculated values are much smaller as compared to those
in Fig. 1, when the barrier height of the order of 1 eV
was used. The huge difference between the experimental
and calculated values indicates that the asymmetry of I–
U characteristics has another nature. In addition, it must
be stressed that the Schottky emission may be ineffective
in these capacitors with the large thickness of the anodic
oxide, because there is the possibility for the injected
electrons to be captured to the bulk traps. It is natural to
assume that in this case the leakage current is controlled
by the Poole–Frenkel emission. In this conductivity
mechanism, the charge transfer between localized traps
is triggered by field-induced lowering the potential
barrier height for the carriers captured in the traps [11].
Obviously, the conductivity process is are hopping in
nature and particularly relevant for MIS capacitors with
thick oxide, where the relative importance of Schottky
emission decreases. The Poole–Frenkel effect is
assumed to be applicable for the neutral traps only [22].
Potential barrier lowering occurs as a result of the
Coulomb interaction between the released electron and
the arising charged trap. For the singly ionized trap, it is
given by the following expression:
21
21
0
3
21
PFPF FeF ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
==ΔΦ
∞επε
β , (2)
where F is the electric field strength, ε∞ – optical
dielectric constant. Other symbols have their usual
meanings. With the lowered barrier, the concentration of
thermally activated carriers n0 increases yielding the
Poole–Frenkel current density [22]
⎟
⎠
⎞
⎜
⎝
⎛ ΔΦ=
kT
FenJ PF
0PF expμ , (3)
where n0 is the thermally equilibrium concentration of
electrons, µ – electron mobility. The often cited current
density is represented as [11]
exp
21
PF0
PF ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛ −Φ
−∝
kT
FFJ β , (4)
where Φ0 is the energy for the electron transition from
the neutral trap to the conduction band. Obviously,
experimental I–U curves should be represented by the
straight line in the coordinates ( ) 21
PFln FFJ − , if this
mechanism is dominant. The slope of the straight line
βPF is usually used for estimation of the optical dielectric
constant ε∞. In the case of weak compensation of the
donor-like traps the current density is given by
( ) ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛ −Φ
−=
kT
FFNNeJ tc 2
exp
21
PF021
PF
βμ , (5)
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 4. P. 470-474.
doi: https://doi.org/10.15407/spqeo20.04.470
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
473
where Nt is the density of traps, Nc – effective density of
states in the conduction band [23]. The current-voltage
characteristics calculated using the formula (3) are
shown in Fig. 3. The calculated curves were obtained for
the mean value of the electron mobility µ = 7 cm2/V·s
reported for amorphous In2O3 films [18-20] and the
optical dielectric constant ε∞ = 14. The electron
concentration n0 served as an adjusting parameter.
The Poole–Frenkel conductivity in the
investigated capacitors can be explained as follows. At
low electric field, ohmic conductivity occurs due to
hopping of thermally excited electrons between the
traps. With the bias increase, electrons are injected
from the InSb substrate to the conduction band of the
oxide through the traps located near the interface. The
drift of injected electrons in the conduction band, their
capture to the bulk traps and subsequent release from
the traps result in the Poole–Frenkel conductivity. The
injected electrons can be captured by shallow and deep
traps, but shallow traps seem to be more effective in
the charge transfer at low temperature. However, when
the capacitor is heated from 77 K to room temperature
empting of deep traps occurs. Being excited to the
conduction band, electrons have large probability to be
captured by shallow traps and surface defects. This
results in the conductivity increase as well as the shift
of C–U curve in Fig. 4 towards the positive bias
voltage. In the process of prolong storage at room
temperature, the initial distribution of electrons
between the deep and shallow traps is restored. In
general terms, the proposed model of conductivity
correlates with those previously discussed in the
literature [5, 24, 25].
To explain the polarity dependent current-voltage
characteristics in Fig. 1, one should point out that the
investigated capacitors are characterized by rather low
resistance of the anodic oxide. Due to the fact that the
negatively charged interface results in formation of the
depletion region in InSb, the resistance of the substrate
and anodic oxide may be comparable. In the forward
biased capacitors, the resistance of the depletion region
decreases and the applied bias is mainly dropped on the
anodic oxide yielding the nonlinear I–U characteristics.
At the reverse bias, smaller portion of the applied bias
drops on the oxide, which results in the linear (ohmic) I–
U characteristics.
Another reason for the asymmetry of the current-
voltage characteristic may be as follows. The compo-
sition inhomogeneity in the anodic oxide can cause the
electrical inhomogeneity due to formation of graded
band gap and non-uniform distribution of charged
defects. Since Ga2O3 has the larger band gap in
comparison with In2O3 [26-28], built-in electric field can
appear in the anodic oxide. The presence of this built-in
electric field can explain the spontaneous motion of
carriers injected from the interface into the anodic oxide
at a distance comparable to the oxide layer thickness
[25]. To clarify the situation, additional investigations
are needed.
10-7
10-6
10-5
10-4
10-3
3
2
1
3.02.52.01.51.00.50
I/U
, A
/V
U1/2, V1/2
Fig. 3. Measured (dots) and calculated (lines) current-voltage
characteristics in initial (1), subjected to thermal cycling (2)
and stored for one month (3) InSb MIS capacitors in the
Poole–Frenkel coordinates. Parameters for calculation: ε∞ = 14,
µ = 7 cm2/V·s, n0 = 3·106 cm–3 (1) and 5·109 cm–3 (2).
-2.0 -1.5 -1.0 -0.5 1.00.50
1.0
0.8
0.6
0.4
0.2
0
C
/C
0
U, V
Fig. 4. High-frequency, 1 MHz, capacitance-voltage charac-
teristic in MIS capacitor before (close dots) and after (open
dots) multiple thermal cycling.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017. V. 20, N 4. P. 470-474.
doi: https://doi.org/10.15407/spqeo20.04.470
© 2017, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
474
4. Conclusions
1. The current-voltage characteristics in MIS
capacitors of InSb are shown to be polarity dependent.
The forward current versus voltage dependences
comprise the linear and nonlinear parts, whereas the
reverse current linearly depends on the applied bias.
2. Asymmetry and nonlinear behavior of the
current-voltage characteristics are explained by
comparative contribution of the anodic oxide and the
substrate of n-InSb to the total resistance of MIS
capacitors. The depletion region is caused by the
negative fixed charge localized in the anodic oxide and
interface.
3. Comparing the measured and calculated
current-voltage characteristics, better coincidence was
obtained for the Poole–Frenkel emission mechanism of
direct current conductivity in the anodic oxide.
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|
| id | nasplib_isofts_kiev_ua-123456789-214992 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-21T14:45:47Z |
| publishDate | 2017 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Beketov, G.V. Sukach, A.V. Tetyorkin, V.V. Trotsenko, S.P. 2026-03-06T09:49:58Z 2017 Trap-assisted conductivity in anodic oxide on InSb / G.V. Beketov, A.V. Sukach, V.V. Tetyorkin, S.P. Trotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 470-474. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 73.20.-r, 73.40.Qv https://nasplib.isofts.kiev.ua/handle/123456789/214992 https://doi.org/10.15407/spqeo20.04.470 The direct current conductivity of the anodic oxide of InSb has been investigated as a function of applied bias and temperature. Proposed in this work is a model of conductivity that includes ohmic, trap-assisted tunneling, and Poole–Frenkel conduction processes. Two defect states were found in the energy gap of the anodic oxide, which can be attributed to bulk traps. The asymmetry in the current-voltage characteristics is analyzed in terms of the comparative distribution of the applied bias voltage between the anodic oxide and the depletion region in InSb. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Trap-assisted conductivity in anodic oxide on InSb Article published earlier |
| spellingShingle | Trap-assisted conductivity in anodic oxide on InSb Beketov, G.V. Sukach, A.V. Tetyorkin, V.V. Trotsenko, S.P. |
| title | Trap-assisted conductivity in anodic oxide on InSb |
| title_full | Trap-assisted conductivity in anodic oxide on InSb |
| title_fullStr | Trap-assisted conductivity in anodic oxide on InSb |
| title_full_unstemmed | Trap-assisted conductivity in anodic oxide on InSb |
| title_short | Trap-assisted conductivity in anodic oxide on InSb |
| title_sort | trap-assisted conductivity in anodic oxide on insb |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/214992 |
| work_keys_str_mv | AT beketovgv trapassistedconductivityinanodicoxideoninsb AT sukachav trapassistedconductivityinanodicoxideoninsb AT tetyorkinvv trapassistedconductivityinanodicoxideoninsb AT trotsenkosp trapassistedconductivityinanodicoxideoninsb |