Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide f...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/214993 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 465-469. — Бібліогр.: 27 назв. — англ. |