Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide f...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2017
Main Authors: Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Kapitanchuk, L.M., Svetlichnyi, A.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/214993
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 465-469. — Бібліогр.: 27 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Bacherikov, Yu.Yu.
Konakova, R.V.
Okhrimenko, O.B.
Berezovska, N.I.
Kapitanchuk, L.M.
Svetlichnyi, A.M.
author_facet Bacherikov, Yu.Yu.
Konakova, R.V.
Okhrimenko, O.B.
Berezovska, N.I.
Kapitanchuk, L.M.
Svetlichnyi, A.M.
citation_txt Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 465-469. — Бібліогр.: 27 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er₂O₃ film approaching the stoichiometric one. At the same time, the introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening of the photoluminescence band measured in this structure.
first_indexed 2026-03-21T13:46:07Z
format Article
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id nasplib_isofts_kiev_ua-123456789-214993
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2026-03-21T13:46:07Z
publishDate 2017
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Bacherikov, Yu.Yu.
Konakova, R.V.
Okhrimenko, O.B.
Berezovska, N.I.
Kapitanchuk, L.M.
Svetlichnyi, A.M.
2026-03-06T09:50:21Z
2017
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 465-469. — Бібліогр.: 27 назв. — англ.
1560-8034
PACS: 77.55.-g, 78.55.Qr, 81.15.-z
https://nasplib.isofts.kiev.ua/handle/123456789/214993
https://doi.org/10.15407/spqeo20.04.465
The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er₂O₃ film approaching the stoichiometric one. At the same time, the introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening of the photoluminescence band measured in this structure.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
Article
published earlier
spellingShingle Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
Bacherikov, Yu.Yu.
Konakova, R.V.
Okhrimenko, O.B.
Berezovska, N.I.
Kapitanchuk, L.M.
Svetlichnyi, A.M.
title Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
title_full Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
title_fullStr Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
title_full_unstemmed Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
title_short Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
title_sort optical properties of thin erbium oxide films formed by rapid thermal annealing on sic substrates with different structures
url https://nasplib.isofts.kiev.ua/handle/123456789/214993
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AT berezovskani opticalpropertiesofthinerbiumoxidefilmsformedbyrapidthermalannealingonsicsubstrateswithdifferentstructures
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