Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2017
• Hauptverfasser: Bacherikov, Yu.Yu., Konakova, R.V., Okhrimenko, O.B., Berezovska, N.I., Kapitanchuk, L.M., Svetlichnyi, A.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2017
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/214993
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures / Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, N.I. Berezovska, L.M. Kapitanchuk, A.M. Svetlichnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 465-469. — Бібліогр.: 27 назв. — англ.

The comparative analysis of optical characteristics inherent to Er₂O₃/SiC and Er₂O₃/por-SiC/SiC structures has been performed. It has been shown that, regardless of the substrate on which the Er₂O₃ film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide f...