Preparation and study of the porous Si surfaces obtained by electrochemical method
A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morph...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2017 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2017
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215003 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Preparation and study of the porous Si surfaces obtained by electrochemical method / V. Lytovchenko, T. Gorbanyuk, V. Kladko, A. Sarikov, N. Safriuk, L. Fedorenko, Steponas Asmontas, Jonas Gradauskas, Edmundas Sirmulis, Ovidijus Zalys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2017. — Т. 20, № 4. — С. 385-395. — Бібліогр.: 28 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A review of original results concerning the electrochemical formation of porous Si layers and an investigation of properties inherent to the formed layers have been presented. The results related to observation of changes in pores’ morphology depending on the etching conditions, correlation of morphology of the porous layers with their surface composition, photoluminescence and structural characteristics, catalytic activity of porous Si-based MIS structures, as well as theoretical modeling of the kinetics and mechanisms of the porous Si growth have been described.
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| ISSN: | 1560-8034 |