Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
This review is devoted to the presentation and analysis of physical mechanisms of ohmic contact formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched over the recent decade are described. Used in this revi...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2018 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/215148 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) / A.V. Sachenko, R.V. Konakova, A.Ye. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 5-40. — Бібліогр.: 105 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862706859484381184 |
|---|---|
| author | Sachenko, A.V. Konakova, R.V. Belyaev, A.Ye. |
| author_facet | Sachenko, A.V. Konakova, R.V. Belyaev, A.Ye. |
| citation_txt | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) / A.V. Sachenko, R.V. Konakova, A.Ye. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 5-40. — Бібліогр.: 105 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This review is devoted to the presentation and analysis of physical mechanisms of ohmic contact formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched over the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of a doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts' ohmicity up to helium temperatures.
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| first_indexed | 2026-03-19T02:46:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-215148 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2026-03-19T02:46:24Z |
| publishDate | 2018 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Konakova, R.V. Belyaev, A.Ye. 2026-03-09T09:48:10Z 2018 Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) / A.V. Sachenko, R.V. Konakova, A.Ye. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 5-40. — Бібліогр.: 105 назв. — англ. 1560-8034 PACS: 61.72.Ft, 61.72.Hh, 61.72.Lk, 73.30.+y, 73.40.cg, 73.40.Ns https://nasplib.isofts.kiev.ua/handle/123456789/215148 https://doi.org/10.15407/spqeo21.01.005 This review is devoted to the presentation and analysis of physical mechanisms of ohmic contact formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched over the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of a doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts' ohmicity up to helium temperatures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Semiconductor Physics Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) Article published earlier |
| spellingShingle | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) Sachenko, A.V. Konakova, R.V. Belyaev, A.Ye. Semiconductor Physics |
| title | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) |
| title_full | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) |
| title_fullStr | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) |
| title_full_unstemmed | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) |
| title_short | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) |
| title_sort | physical mechanisms providing formation of ohmic contacts, metal-semiconductor (review) |
| topic | Semiconductor Physics |
| topic_facet | Semiconductor Physics |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/215148 |
| work_keys_str_mv | AT sachenkoav physicalmechanismsprovidingformationofohmiccontactsmetalsemiconductorreview AT konakovarv physicalmechanismsprovidingformationofohmiccontactsmetalsemiconductorreview AT belyaevaye physicalmechanismsprovidingformationofohmiccontactsmetalsemiconductorreview |