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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)

This review is devoted to the presentation and analysis of physical mechanisms of ohmic contact formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched over the recent decade are described. Used in this revi...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2018
Hauptverfasser:	Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2018
Schlagworte:	Semiconductor Physics
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/215148
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) / A.V. Sachenko, R.V. Konakova, A.Ye. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 5-40. — Бібліогр.: 105 назв. — англ.

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