Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
This review is devoted to the presentation and analysis of physical mechanisms of ohmic contact formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched over the recent decade are described. Used in this revi...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215148 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) / A.V. Sachenko, R.V. Konakova, A.Ye. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 1. — С. 5-40. — Бібліогр.: 105 назв. — англ. |
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