Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p-doping, finite thickness of the quasi-neutral regions, and possible non-uniformity of the bulk recombination coefficient. The theory is...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2018 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2018
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/215283 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization / V.V. Korotyeyev, V.O. Kochelap, S.V. Sapon, B.M. Romaniuk, V.P. Melnik, O.V. Dubikovskyi, T.M. Sabov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2018. — Т. 21, № 3. — С. 294-306. — Бібліогр.: 33 назв. — англ. |